[job] Virtual Prototyping-Power Devices

Development Engineer 

Virtual Prototyping-Power Devices 

(f/m/div)*

Your Profile: Delivering quality to the customer is very important to you. You are characterized by a precise and structured way of working and are able to dive deep into technical details. At the same time, your pro-active and communication skills will help you to work together profitably with various colleagues across departments.

You are best equipped for this task if you have:

• A degree in Electrical Engineering, Mathematics, Physics or similar field
• 1 to 3 years of relevant experience in technical field as engineer, ideally within the semiconductor market and with MOS devices, Diodes, IGBTs
• Experience with Unix and/or programming languages (e.g. C++ and Python)
are an advantage

• Skills in relationship building and strong customer orientation
• Experience in working with Spice-based compact models (e.g. PSPICE, SIMETRIX) and preferably experience in working with TCAD process and device simulations
• Very good English communication skills, German is a plus

[read more...]

* The term gender in the sense of the General Equal Treatment Act (GETA) or other national legislation refers to the biological assignment to a gender group. At Infineon we are proud to embrace (gender) diversity, including female, male and diverse.

[paper] Mobility in GC SOI Transistors

Lucas M. B. da Silva¹, Bruna Cardoso Paz², Michelly de Souza¹

Analysis of Mobility in Graded-Channel SOI Transistors Aiming at Circuit Simulation

Journal of Integrated Circuits and Systems; vol. 15, no. 2 pp.1-5 (2020) 

¹Department of Electrical Engineering, Centro Universitário FEI, São Bernardo do Campo, Brazil
²CEA, Leti, Grenoble, France

Abstract: This work presents an analysis of the behavior of the effective mobility of graded-channel FD SOI transistors using an Y-Function-based technique. Low field mobility, linear and quadratic attenuation factors were extracted from two-dimensional numerical simulations. The influence of the length of both channel regions over these parameters was analyzed. The parameters extracted from experimental data were used in a SPICE simulator, showing that it is possible to simulated GC SOI MOSFET using a regular SOI MOSFET model, by adjusting its parameters. This approach presents a percentage error smaller than 7.91% for low VDS.

Fig. Simulated curves of IDS vs. VGS and gm vs. VGS 

for GCSOI nMOSFETs with L= 2 µm and VDS=50 mV.

Acknowledgements: This study was supported by CNPq grants #311466/2016- 8 and #427975/2016-6. Authors would like to acknowledge Prof. Denis Flandre, from UCLouvain for providing the experimental samples.

[paper] Emerging 2D Organic-Inorganic Heterojunctions

KePei¹ TianyouZhai¹

Emerging 2D Organic-Inorganic Heterojunctions

Cell Reports Physical Science, Vol. 1, Issue 8, 2020, 100166

DOI: 10.1016/j.xcrp.2020.100166

¹State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, HUST, Wuhan 430074, PRC

Abstract: The unique properties of two-dimensional (2D) materials have boosted intensive interests in combining distinct 2D materials into van der Waals heterojunctions for novel device structures. The organic-inorganic heterojunctions, integrating atomically thin inorganic materials with an unlimited variety of organic molecules, provide an ideal platform for broader, superior, and on-demand functional applications by incorporating customized organic molecules that particularly exhibit decent optoelectronic properties, promising scalability and remarkable flexibility. In this Review, emerging 2D organic-inorganic heterojunctions from the perspectives of materials, manufacturing, structures, and interfaces, as well as recent progress in functional applications, are provided. Two prototypical construction approaches are summarized—epitaxy growth and molecular doping—followed by four directions of device applications, including electronic device, optoelectronic device, energy harvesting device, and memory and neuromorphic device. Finally, the frontier challenges and future outlook associated with the organic-inorganic heterojunctions are highlighted, which is critical for the further development of this cross-fertilized research field.

Figure: Overview of 2D Organic-Inorganic Heterojunctions for Functional Device Applications

Acknowledgments: This work was supported by the Natural Science Foundation of China (21825103), the China Postdoctoral Science Foundation (2019M662607 and 2019TQ0103), the Hubei Provincial Natural Science Foundation of China (2019CFA002), and the Fundamental Research Funds for the Central University (2019kfyXMBZ018).

MOS-AK Workshop at THM Giessen - 2nd Announcement

--------- Forwarded message ---------
From: Alexander Kloes <alexander.kloes@ei.thm.de>Dear colleagues and friends,

the Joint Spring MOS-AK Workshop 

and Symposium on Schottky Barrier MOS (SB-MOS) devices 

with IEEE EDS Mini-Colloquium 

on „Non-conventional Devices and Technologies" 

is approaching. We decided for a virtual event due to the still present COVID-19 pandemic and regulations worldwide. The event will take place in Zoom as live presentations. The number of attendees is limited to 300 participants. Therefore, we recommend to register for the MOS-AK, Symposium of SB-MOS and IEEE EDS MQ by use of IEEE vTools with following link: https://meetings.vtools.ieee.org/m/205571

Registered attendees will receive the Zoom link for the event a few days before via email from vTools. Presenters will receive an additional link for advance testing of their presentation setup. The registration is for free.

Our joint R&D event will start on September 29^th at 9:15am with a MOS-AK workshop. The MOS-AK workshop will continue on September 30^th morning to noon. In the afternoon, the IEEE EDS Mini-Colloquium „Non-Conventional Devices and Technologies" will take place and will continue during the morning of  October 1^st . In the afternoon, the Symposium on SB-MOS will be held. 

I would like to inform you, that the preliminary program is now available online. 
You can find it at https://ssbmos.blogspot.com/p/programm-2020.html

Best papers will be selected for a special Solid-State-Electronics (SSE) compact modeling issue of MOS-AK activities. 

Attendees are welcome to participate in our joint R&D event. Further information is present at

Symposium of SBMOS
https://ssbmos.blogspot.com
and
MOS-AK
http://www.mos-ak.org/giessen_2020

Important new dates: 
1st Event Announcement: Aug. 2020 
2nd Event Announcement: Sept. 2020 
Final Workshop Program: Sept. 2020
Registration deadline: Sept. 21, 2020
"Spring" MOS-AK Workshop: Sept. 29/30, 2020 
IEEE MQ: Sept. 30/Oct. 1, 2020
Symposium SB-MOS devices: Oct. 1, 2020

Best regards

Alexander Kloes

_____________________________________________________________

Prof. Dr.-Ing. Alexander Kloes

 

Technische Hochschule Mittelhessen - University of Applied Sciences

Department Electrical Engineering and Information Technology

Spokesperson of Competence Center Nanotechnology and Photonics

Director of Doctoral Theses at Universitat Rovira i Virgili, Tarragona

Wiesenstrasse 14

D-35390 Giessen

Germany

E-mail: alexander.kloes@ei.thm.de

Web: go.thm.de/dmrg-en and www.thm.de

[JICS] SBMicro2020 Special Section Issue

Journal of Integrated Circuits and Systems

SBMicro2020 Special Section Issue

Vol 15 No 2 (2020)

The Journal of Integrated Circuits and Systems is an effort of both Brazilian Microelectronics Society - SBMicro and Brazilian Computer Society - SBC to create a new scientific journal covering intended to present state-of-art papers on Integrated Circuits and Systems, covering the fields of Process and Materials, Device and Characterization, Design, Test and CAD, among other relevant topics. The JICS is indexed in Scopus and Scimagojr.

SBMicro2020 Special Section Guest Editors:
Durga Misra, New Jersey Institute of Technology – NJIT, United States
Michelly de Souza, Centro Universitário FEI, Brazil

Online ISSN: 1872-0234 (from 2017 on)
Printed ISSN: 1807-1953 (prior to 2017)
Published: 2020-08-23