#Top10 #Analogue Companies https://t.co/AOW7Q1A4Ou #semi pic.twitter.com/Zzt1sVsobD
— Wladek Grabinski (@wladek60) August 5, 2020
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August 05, 2020 at 10:06AM
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Aug 5, 2020
#Top10 #Analogue Companies https://t.co/AOW7Q1A4Ou #semi https://t.co/Zzt1sVsobD
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August 05, 2020 at 10:06AM
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[paper] Macromodels for MEMS Switches
Aurel-Sorin Lup1, Gabriela Ciuprina1, Daniel Ioan1 and Anton Duca1
and
Alexandra Nicoloiu2 and Dan Vasilache2
Physics-aware macromodels for MEMS switches
COMPEL International Journal (2020)
1DEE Politehnica, Uni. Bucharest, (R)
2IMT-Bucharest, Bucharest (R)
Abstract: The purpose of this paper is to propose a physics-aware algorithm to obtain radio frequency (RF)- reduced models of micro-electromechanical systems (MEMS) switches and show how, together with multiphysics macromodels, they can be realized as circuits that include both lumped and distributed parameters. The macromodels are extracted with a robust procedure from the solution of Maxwell’s equations with electromagnetic circuit element (ECE) boundary conditions. The reduced model is extracted from the simulations of three electromagnetic field problems, in full-wave regime, that correspond to three configurations: signal lines alone, switch in the up and down positions. The technique is exemplified for shunt switches, but it can be extended for lateral switches. Moreover, the algorithm is able take frequency dependence into account both for the signal lines and for the switch model. For the later, the order of the model is increased until a specified accuracy is achieved. The use of ECE as boundary conditions for the RF simulation of MEMS switches has the advantage that the definition of ports is unambiguous and robust as the ports are clearly defined. The extraction approach has the advantage that the simplified model keeps the basic phenomena, i.e. the propagation of the signal along the lines. As the macromodel is realized with a netlist that uses transmission lines models, the lines’ extension is natural. The frequency dependence can be included in the model, if needed.
Fig: Modeling chain: from continuous models to reduced macromodels
Acknowledgement: The work has been funded by the Operational Programme Human Capital of the Ministry of European Funds through The Financial Agreement 51675/09.07.2019, SMIS code 125125.
Aug 4, 2020
William English, Computer Mouse Co-Creator, Has Passed died July 26 in San Rafael, California. He was 91 years old. https://t.co/q7PNnR694g #semi https://t.co/KOCm8at33a
William English, Computer Mouse Co-Creator, Has Passed died July 26 in San Rafael, California. He was 91 years old.https://t.co/q7PNnR694g#semi pic.twitter.com/KOCm8at33a
— Wladek Grabinski (@wladek60) August 4, 2020
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[paper] SiC MOSFET SPICE Model
Lefdal Hove, Haavard, Ole Christian Spro, Giuseppe Guidi
and Dimosthenis Peftitsis
Improved SiC MOSFET SPICE Model to Avoid Convergence Errors
Materials Science Forum 1004 (July 2020): 856–64
DOI: 10.4028/www.scientific.net/msf.1004.856
Abstract: This paper presents improvements to a SPICE model for a commercially available SiC MOSFET to avoid convergence errors while still providing reliable simulation results. Functionality in the internal part of the model that shapes the transconductance of the device according to its junction temperature and gate-source voltage dependency has been improved to provide a continuous characteristic rather than the initial discontinuous performance. Furthermore, the output characteristics from the initial and the proposed model have been compared to lab measurements of an actual device. The results show that the proposed and initial model provide equally reliable simulation results. However, the proposed model does not run into convergence problems.
[1] X. She, A. Huang, O. Lucia, and B. Ozpineci, Review of Silicon Carbide Power Devices and Their Applications, IEEE Transactions on Industrial Electronics, vol. 64, no. 10, p.8193–8205, (2017).
[2] J. Rabkowski, D. Peftitsis, and H. P. Nee, Silicon carbide power transistors: A new era in power electronics is initiated, IEEE Industrial Electronics Magazine, vol. 6, no. 2, p.17–26, (2012).
[3] A. Stefanskyi, L. Starzak, A. Napieralski, and M. Lobur, Analysis of SPICE models for SiC MOSFET power devices,, 2017 14th CADSM 2017 - Proceedings, p.79–81, (2017).
[4] H. L. Hove, O. C. Spro, D. Peftitsis, G. Guidi, and K. Ljøkelsøy, Minimization of dead time effect on bridge converter output voltage quality by use of advanced gate drivers, 2019 10th ICPE 2019 ECCE Asia, (2019).
[5] N. Mohan, T. Undeland, and W. Robbins, Power Electronics; Converters, Applications, and Design, third ed., Wiley, (2003).
[6] C. Enz, F. Krummenacher, and E. Vittoz, An Analytical MOS Transistor Model Valid in All Regions of Operation and Dedicated to Low-Voltage and Low-Current Application, Analog Integrated Circuits and Signal Processing, vol. 8, p.83–114, (1995).
[7] M. Bucher, C. Lallement, C. Enz, F. Théodoloz, and F. Krummenacher, The EPFL-EKV MOSFET Model Equations for Simulation Technical Report V2.6,, EPFL, Lausanne, Switzerland, (1999).
[8] B. N. Pushpakaran, S. B. Bayne, G. Wang, and J. Mookken, Fast and accurate electro-thermal behavioral model of a commercial SiC 1200V, 80 mΩ power MOSFET,, Digest of Technical Papers IEEE IPPC, vol. 2015-Octob, p.1–5, (2015).
Aug 3, 2020
IEEE International Electron Devices Meeting to be Held Virtually https://t.co/LGJVdu1TyN https://t.co/vVgVsLrX4I #paper https://t.co/XN5oesBAQE
IEEE International Electron Devices Meeting to be Held Virtually https://t.co/LGJVdu1TyNhttps://t.co/vVgVsLrX4I#paper pic.twitter.com/XN5oesBAQE
— Wladek Grabinski (@wladek60) August 3, 2020
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August 03, 2020 at 06:10PM
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