Is the Threat of ‘Fake Science’ Real? "Thinking ahead to the potential for fake science can better equip research institutions to respond to targeted disinformation while preserving an open scientific community." https://t.co/nzAokiqybW #paper https://t.co/D0WasFZRwv

Is the Threat of ‘Fake Science’ Real?

"Thinking ahead to the potential for fake science can better equip research institutions to respond to targeted disinformation while preserving an open scientific community."https://t.co/nzAokiqybW #paper pic.twitter.com/D0WasFZRwv

— Wladek Grabinski (@wladek60) August 27, 2019

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August 27, 2019 at 02:31PM
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Y. Yamamoto et al., "The Study of Plasma Induced Damage on 65-nm Silicon on Thin BOX Transistor," in IEEE Journal of the Electron Devices Society, vol. 7, pp. 825-828, 2019 https://t.co/ppz92LZnNi #paper https://t.co/7hmMCY5rvx

Y. Yamamoto et al., "The Study of Plasma Induced Damage on 65-nm Silicon on Thin BOX Transistor," in IEEE Journal of the Electron Devices Society, vol. 7, pp. 825-828, 2019https://t.co/ppz92LZnNi #paper pic.twitter.com/7hmMCY5rvx

— Wladek Grabinski (@wladek60) August 27, 2019

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August 27, 2019 at 11:58AM
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B. K. Esfeh, V. Kilchytska, N. Planes, M. Haond, D. Flandre and J. Raskin, "28-nm FDSOI nMOSFET RF Figures of Merits and Parasitic Elements Extraction at Cryogenic Temperature Down to 77 K," in IEEE JEDS, vol. 7, pp. 810-816, 2019. https://t.co/VXOuHjBAWI #paper https://t.co/mT1vV0psze

B. K. Esfeh, V. Kilchytska, N. Planes, M. Haond, D. Flandre and J. Raskin, "28-nm FDSOI nMOSFET RF Figures of Merits and Parasitic Elements Extraction at Cryogenic Temperature Down to 77 K," in IEEE JEDS, vol. 7, pp. 810-816, 2019.
https://t.co/VXOuHjBAWI #paper pic.twitter.com/mT1vV0psze

— Wladek Grabinski (@wladek60) August 27, 2019

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August 27, 2019 at 09:54AM
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低频噪声测试在新兴半导体材料和器件物理机制探索的应用研究 Application Research of Low Frequency Noise Testing in the Exploration of Emerging Semiconductor Materials and Devices Physical Mechanism https://t.co/Y9lDjd1kPn #paper https://t.co/6X4218ejOF

低频噪声测试在新兴半导体材料和器件物理机制探索的应用研究
Application Research of Low Frequency Noise Testing in the Exploration of Emerging Semiconductor Materials and Devices Physical Mechanismhttps://t.co/Y9lDjd1kPn #paper pic.twitter.com/6X4218ejOF

— Wladek Grabinski (@wladek60) August 27, 2019

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August 27, 2019 at 09:15AM
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V. Veliadis, "The Impact of Education in Accelerating Commercialization of Wide-Bandgap Power Electronics [Expert View]," in IEEE Power Electronics Magazine, vol. 6, no. 2, pp. 62-66, June 2019 doi: 10.1109/MPEL.2019.2910715 https://t.co/R14V6BDxXR #paper https://t.co/NnTfIqzaRR

V. Veliadis, "The Impact of Education in Accelerating Commercialization of Wide-Bandgap Power Electronics [Expert View]," in IEEE Power Electronics Magazine, vol. 6, no. 2, pp. 62-66, June 2019

doi: 10.1109/MPEL.2019.2910715 https://t.co/R14V6BDxXR #paper pic.twitter.com/NnTfIqzaRR

— Wladek Grabinski (@wladek60) August 26, 2019

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August 26, 2019 at 08:45PM
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