B. K. Esfeh, V. Kilchytska, N. Planes, M. Haond, D. Flandre and J. Raskin, "28-nm FDSOI nMOSFET RF Figures of Merits and Parasitic Elements Extraction at Cryogenic Temperature Down to 77 K," in IEEE JEDS, vol. 7, pp. 810-816, 2019.
— Wladek Grabinski (@wladek60) August 27, 2019
https://t.co/VXOuHjBAWI #paper pic.twitter.com/mT1vV0psze
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August 27, 2019 at 09:54AM
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