Nov 22, 2017

Determination of well flat band condition in thin film FDSOI transistors using C-V measurement for accurate parameter extraction https://t.co/6djtGE7OZV #paper https://t.co/RYLH3fSGhg


from Twitter https://twitter.com/wladek60

November 21, 2017 at 11:54PM
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A 32 kb 9T near-threshold SRAM with enhanced read ability at ultra-low voltage operation https://t.co/R0t2mdhbMF #paper


from Twitter https://twitter.com/wladek60

November 21, 2017 at 11:18PM
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Nov 21, 2017

[mos-ak] [Final Program] 10th International MOS-AK Workshop in the Silicon Valley

10th International MOS-AK Workshop 
(co-located with the CMC Meeting and IEDM Conference) 
Silicon Valley, December 6, 2017 

Together with local organization teams Cadence Design Systems and Keysight Technologies as well as International MOS-AK Board of R&D Advisers: Larry Nagel, Omega Enterprises Consulting (USA), Andrei Vladimirescu, UCB (USA); ISEP (FR) and all the Extended MOS-AK TPC Committee, we have pleasure to invite to the MOS-AK Compact Modeling Workshop which will be organized for consecutive 10th time in the timeframe of coming IEDM and CMC Meetings.

Scheduled,10th subsequent MOS-AK modeling workshop organized in the Silicon Valley, aims to strengthen a network and discussion forum among experts in the field, enhance open platform for information exchange related to compact/SPICE modeling and Verilog-A standardization, bring people in the compact modeling field together, as well as obtain feedback from technology developers, circuit designers, and TCAD/EDA tool developers and vendors. The MOS-AK workshop program is available online:
<http://www.mos-ak.org/silicon_valley_2017/>

Venue: 
Cadence Design Systems 
2655 Seely Ave
San Jose, CA 95134
Building 5 (map)

Online Workshop Registration is still open
(any related inquiries can be sent to register@mos-ak.org)

Postworkshop Publications:
Selected best MOS-AK technical presentation will be recommended for further publication
in a special issue of the International Journal of High Speed Electronics and Systems

Extended MOS-AK Committee
WG211117

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Three-dimensional vertical Si nanowire MOS capacitor #model structure for the study of electrical versus... https://t.co/vekyZr5RmC


from Twitter https://twitter.com/wladek60

November 21, 2017 at 04:49PM
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Three-dimensional vertical Si nanowire MOS capacitor #model structure for the study of electrical versus geometrical Si nanowire characteristics https://t.co/OnvqDTh6l2


from Twitter https://twitter.com/wladek60

November 21, 2017 at 04:48PM
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