Jul 4, 2013

URSI-C Commission Workshop (Kawasaki)

Theme: "Simulation Techniques for wireless communication integrated circuit design" 

Sponsorship:
Sponsored by:
  • IEEE MTT-S Japan Chapter 
  • IEEE AP-S Japan Chapter 
  • IEEE VT-S Japan Chapter 
  • IEEE SSC-S Japan Chapter 
Date and time: Friday, 12:30 to 16:30, July 05, 2013
Location:  Toshiba Science Museum (directions from Komukaitoshiba town)
Entry fee: Free

Program
12:15 - 12:30 Reception
12:30 - 13:15 Toshiba Science Museum tour
13:30 - 13:40 Opening Remarks Masahiro Morikura (Kyoto University)
13:40 - 14:20 "High frequency modeling of the MOSFET, including the process variation" Yoshitomi Sadayuki (Toshiba)
14:20 - 15:00 "Challenges and Solutions for RFIC Realization"  Sugaya Hidehiko (Cadence Japan)
15:00 - 15:10 Break (10 minutes)
15:10 - 15:50 "Methodology for substrate coupling analysis with high frequency accuracy" Sotiris Bantas (Helic, Inc.)
15:50 - 16:30 "Behavioral technology of RF transceiver circuit" Takahiro Kikuchi (Agilent Technologies)
16:30 Closing
17:30 - social gathering

[read more...]

Jun 27, 2013

[mos-ak] "Advances in Condensed Matter Physics" Special Issue on Device Modeling

Advances in Condensed Matter Physics is published using an open access publication model, meaning that all interested readers are able  to freely access the journal online without the need for a subscription. Moreover, the journal currently has an Impact Factor of 1.158.

 

This special issue focuses on novel advances in the broad field of device modeling. Models of semiconductor devices are used in circuit simulators in order to predict the functionality of circuits and are an important prerequisite for successful circuit design. The currently available semiconductor models are facing enormous challenges in modeling the observed physical phenomena in the sub-50nm technologies. The demand for advanced models, which can describe emerging devices necessary in the near future and can account for their physical effects, has led to enormous R&D efforts in the development of advanced physics-based models. These novel devices that can reduce the cost of the actual ones (by using organic materials) and/or improve their performances (low leakage, low power, and high speed in a smaller footprint) will be preferred in circuits, thus calling for accurate and reliable models, including new device specific effects. Modeling these devices is of high importance in order to analyze and predict the behaviour of emerging ones, without the high cost necessary to fabricate the real components. For some specific purposes, like power and timing analysis, it is really necessary to incorporate models at gate level, too. These models also suffer the effects of nanoscaling and are currently under intense development.


Potential topics include, but are not limited to:
  • Modeling the physical behaviour of novel silicon-based FETs (FinFETs, DG FETs, nanowires, junctionless FETs, tunneling FETs, variable barrier transistors, etc.)
  • Modeling the physical behaviour of graphene-based devices
  • Modeling the physical behaviour of organic semiconductor-based devices (OLEDs, junctions, TFTs, sensors, etc.)
  • Device and gate level model implementation for circuit simulations

Before submission authors should carefully read over the journal's Author Guidelines, which are located at http://www.hindawi.com/journals/acmp/guidelines/.

Prospective authors should submit an electronic copy of their complete manuscript through the journal Manuscript Tracking System at http://mts.hindawi.com/submit/journals/acmp/rdsd/ according to the following timetable:

 

Manuscript Due  Friday, 13 December 2013

First Round of Reviews  Friday, 7 March 2014

Publication Date  Friday, 2 May 2014

 

Lead Guest Editor

Oana Moldovan, Universitat Rovira i Virgili, Tarragona, Spain

Guest Editors 

AlejandraCastro-Carranza, Universitat Rovira i Virgili, 43007 Tarragona, Spain

François Lime, Universitat Rovira i Virgili, 43007 Tarragona, Spain

Rodrigo Picos, Universitat de les Illes Balears. Cra. deValldemossa, km 7.5, Palma, Illes Balears, Spain

Bogdan Mihai Nae, Universitat Rovira i Virgili, 43007 Tarragona, Spain

Spiros Nikolaidis, Aristotle Universityof Thessaloniki, Thessaloniki, Greece

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Jun 23, 2013

CMC @ Si2

The CMC as a member of the Si2 will continue its basic goal of examining, promoting and standardizing SPICE modeling efforts based upon business needs. CMC (see its Member List)  encourages developers to dwell on current and near-term problems that will advance compact modeling. They will continue to provide industry resources and funding for monitoring/mentoring compact model development.

[read more: CMC Presentation at DAC]

Jun 21, 2013

[mos-ak] 11th MOS-AK/GSA ESSDERC ESSCIRC Workshop with the keynote speaker Larry Nagel

Together with Prof. Andrei Vladimirescu, R&D Scientific Coordinator, the Organizing Committee and Extended MOS-AK/GSA TPC Committee, we have pleasure to invite to the 11th MOS-AK/GSA ESSDERC ESSCIRC Workshop on Sept. 20, 2013 in Bucharest (RO). The event will open next decade of enabling compact modeling R&D exchange.  

Speakers - previsionary list (in alphabetic order)
  • Larry Nagel
    • MOS-AK Keynote Speaker
  • Prof. Matthias Bucher, TUC Chania
  • Dr. Ales Chvala, STU Bratislava
  • Prof. Benjamin Iniguez, URV Tarragona
  • Prof. Hans Juergen Mattausch, Uni Hiroshima
  • Dr. Paolo Nenzi, Uni Roma, NGSpice
  • Dr. Jean-Michel Sallese, EPFL Lausanne
  • Prof. Valentin Turin, OSTU Orel
  • Prof. Andrei Vladimirescu, ISE Paris and UC Berkeley
In the terms of participation, intending participants and authors should also note the following dates: 
  • Call for Papers - May 2013
  • 2nd Announcement - June 2013
  • Final Workshop Program - July, 2013
  • MOS-AK/GSA Workshop - Sept. 20, 2013

Further details and updates: <http://www.mos-ak.org/bucharest/
Email contact: <workshops@mos-ak.org

- with regards - WG (for the MOS-AK/GSA Committee

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Jun 14, 2013

Jobs for modelling specialists

This time, in Paris:

Senior Modelling Engineer

Location:
Paris, France
Sector:
Contract:
Permanent
Salary:
€50,000 – €70,000
 
Look here for more information.