2009 IEEE International SOI Conference

Oct. 5 - 8 October, 2009, Foster City, California

Ever increasing demand and advances in SOI and related technologies make it essential to meet to discuss new gains and accomplishments, as well as to consider new developments introduced in original papers presented at the conference.

AREAS of FOCUS

• SOI device physics and modeling
• Manufacturability and process integration of soi devices
• Low-power SOI technology and circuit design infrastructure
• SOI circuit applications (high-performance mpu, sram, asic, high-voltage, rf, analog, mixed mode, etc.)
• SOI double & multiple gate/vertical channel structures; other novel SOI structures
• New SOI structures, circuits, and applications (3d integration, displays, microactuators, novel memories, optics, etc.)
• SOI reliability issues (hot-carrier effects, radiation effects, high-temperature effects, etc.)
• SOI material science/modification, material characterization, manufacture, and substrate engineering.
• SOI sensors, MEMS and RFIDs technology and applications

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ICMNE-2009

The International Conference Micro- and Nano-Electronics – 2009 (ICMNE-2009) including extended Session “Quantum Informatics” (QI-2009) will be held in October 5-9, 2009 at the holiday hotel “Lipki”, Zvenigorod, Moscow region, Russia. It will continue the series of All-Russian Conferences MNE-1999, MNE-2001, QI-2002, and International Conferences ICMNE-2003, QI-2004, ICMNE-2005, QI-2005. ICMNE-2007, QI-2007. Conference ICMNE is biannual event covering majority of area of micro- and nano-electronic technologies, physics and devices. ICMNE-2009 is focused on recent progress in that area. The Conference will include the exhibition on equipment for micro- and nano-electronics. Conference's scope:

• Micro-, nano-electronic materials and films
• Micro- and nano-electronic technologies and equipment
• Metrology
• Physics and technologies of micro- and nano-devices
• Simulation and modeling
• Quantum informatics

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