Hocheon Yoo and Chang-Hyun Kim, Senior Member, IEEE
Unified Compact Model for Thin-Film Heterojunction Anti-Ambipolar Transistors
IEEE Electron Device Letters (2021)
DOI 10.1109/LED.2021.3102219
* Department of Electronic Engineering, Gachon University, Seongnam 13120, South Korea
Abstract: This letter proposes an advanced compact model for anti-ambipolar transistors based on a lateral thin-film material heterojunction. The modeling idea focuses on an analytical description of component currents and bridging methods necessary for controllable transition between operation regimes. The model is validated by experimental data, and predictive simulations are carried out to demonstrate its applicabilities.
Fig: (a) Cross-sectional device structure of an AAT and its energy diagram at a negative VD (G: gate, S: source, and D: drain). (b) Conceptual illustration of the geometrical origin of the anti-ambipolar switching behavior.
Acknowledgements: This work was supported by the National Research Foundation of Korea (NRF) grants funded by the Korean government (MSIT) (NRF-2019 R1C1C1003356, NRF2020 R1A2C1101647).
