D. Oussalah1,2, R. Clerc2, J. Baylet1, R. Paquet1, C. Sésé1, C. Laugier1, B. Racine1
and J. Vaillant1
On the minimum thickness of doped electron/hole transport layers
in organic semiconductor devices
Journal of Applied Physics 130, 125502 (2021);
DOI: 10.1063/5.0060429
1Université Grenoble Alpes, CEA, Leti, Grenoble 38000, France
2Université de Lyon, UJM-Saint-Etienne, CNRS, IOGS, Lab. Hubert Curien, UMR5516 St-Etienne, France
Abstract: Doped hole (respectively electron) transport layers [HTLs (respectively ETLs)] are commonly used in evaporated organic devices to achieve high work function hole contact (respectively low work function electron contact) in organic LEDs to inject large current, in solar cells to increase the open circuit voltage, and in photodetectors to minimize the dark current. However, optimization of the HTL thickness results from a delicate trade-off. Indeed, on the one hand, to minimize the impact of HTLs on light propagation and series resistance effects, it is commonly admitted that HTLs must be kept as thin as possible. In this work, a model, validated by drift and diffusion simulations, has shown that, depending of the doping level, a minimum thickness between 10 and 20 nm was needed to prevent the transport layer work function from degradation due to field effects. Experiments have been performed on template p-only devices featuring a single HTL of various thicknesses and doping, confirming the validity of the model. Finally, simulations have been performed on a p-i-n device featuring both HTL and ETL. These results constitute precious indications for the design of efficient evaporated organic LEDs, solar cells, or photodetectors.
Fig: Image of a top view of the 200 mm silicon wafer processed to realize TiN/STTB:F4TCNQ/ZnPc:C60/Ag devices.
