[paper] Compact IV Model for DG MoS2 FETs

Ahmed Mounir, Francois Lime, Alexander Kloes, Alexandros Provias, Theresia Knobloch, 

K. P. O’Brien, Tibor Grasser and Benjamin Iniguez

Compact I–V Model for Double-Gated MoS2 FETs Including Short-Channel Effects

IEEE TED, Vol. 72, No. 12, Dec 2025

DOI: 10.1109/TED.2025.3622099

Rovira i Virgili University, Tarragona (SP)
THM University of Applied Sciences, Giessen (D)
Technical University of Vienna (A)
Intel Foundry Technology Research, Hillsboro (US)

Abstract: This article presents a physics-based analytical compact model for double-gated molybdenum disulfide (MoS2) field effect transistors (FETs), incorporating key physical and short-channel effects (SCEs), such as mobility degradation and velocity saturation. The model is developed from a unified charge control model by evaluating the charge density within the 2D MoS2 layer, represented using the Lambert W function, which provides an analytical expression valid and continuous from the subthreshold to the above threshold regime. The drain current is then derived from this unified charge control model, and as a function of closed-form equations for the charge densities at the source and drain ends of the channel. Despite its simplicity, the model shows excellent agreement with experimental data for channel lengths down to 60nm, making it a powerful tool for accurately predicting the performance of downscaled devices. By including SCEs, this work extends previous modeling efforts and provides a more comprehensive framework for the simulation and optimization of 2D material-based FETs in circuit design.

FIG: Cross-sectional view of the double-gated MoS2 FET, showing the top gate oxide stack made of Al2O3 and HfO2, with the local back gate oxide consisting of HfO2. Validation of the compact model against experimental data for double-gate MoS2 FET L = 60nm (bottom line)

Acknowledgements: This work was supported in part by European Union Bayesian inference with flexible electronics for biomedical applications (BAYFLEX) under Contract 101099555 and in part by the Ministry of Science of Spain under Contract PID2021122399OB-I00

[paper] Model for Ultra-Scaled MoS2 MOSFET

Weiran Cai, Wenrui Lan, Zichao Ma*, Lining Zhang, Mansun Chan*

A Full-region Model for Ultra-Scaled MoS2 MOSFET Covering Direct Source-Drain Tunneling 

9th International Symposium on Next Generation Electronics (ISNE), 2021, pp. 1-3,

DOI: 10.1109/ISNE48910.2021.9493621

College of Electronic and Information Technology, Shenzhen University, Shenzhen, China

* Hong Kong University of Science and Technology, Hong Kong, China

Abstract: A full-region model for ultra-scaled monolayer MoS2 MOSFETs is reported in this work. The electrostatic potential in the scaled transistor structure is analyzed based on a first-principle verified potential model. A continuous full region current model is then developed to capture the short channel effects. Based on the potential model, the barrier height and width for direct source-drain tunneling are obtained. The direct tunneling module reproduces the essential physics observed from numerical device simulations. After integration with the thermionic emission model, the full-region current model is implemented into a SPICE simulator and the model convergence is verified by simulating typical circuits.

A drift-diffusion current model of the full region is straightforwardly derived with Taylor expansions of a Si model or from the Pao-Sah integral. It resembles the EKV current model and allows similar expressions of small signal models:

Fig: The impact of SCEs on devices of different channel length is showed in (a) Ids–Vg and (b) Ids–Vd characteristics predicted by the model covering SCEs. When channel length becomes smaller, SCEs becomes more serious. 

Acknowledgement: This work is supported in part by the Natural Science Foundation of China under Grant 61704144, the Shenzhen Science and Technology Project under JCYJ20180305125340386, the General Research Fund (GRF) from Research Grant Council (RGC) of Hong Kong under Grant 16206219