An extended low-frequency noise compact model for single-layer graphene FETs
including correlated mobility fluctuations effect
Nikolaos Mavredakis, Anibal Pacheco-Sanchez, and David Jiménez
https://arxiv.org/pdf/2512.08388
Departament d’Enginyeria Electrònica, Escola d’Enginyeria, Universitat Autònoma de Barcelona, Bellaterra 08193 (SP)
Departamento de Electrónica y Tecnología de Computadores, Universidad de Granada, 18011 Granada (SP)
Abstract: Correlated mobility fluctuations are considered in the physics-based carrier number fluctuation (ΔΝ) low-frequency noise (LFN) compact model of single-layer graphene field effect transistors (GFET) in the present study. Trapped charge density and Coulomb scattering coefficient ΔΝ LFN parameters are obtained after applying a parameter extraction methodology, adapted from conventional silicon technologies,to the linear ambipolar regions of GFETs. Appropriate adjustments are considered in the method according to GFETs’physical characteristics. Afterwards, Hooge mobility as well asseries resistance fluctuations LFN parameters can be extracted.The updated LFN model is validated with experimental data from various long and short-channel GFETs at an extendedrange of gate and drain bias conditions.
Fig: SID2/ID2 vs. VGS at 1 Hz for B (a) and A (b) -type RF GFETs with W=12μm and L=100nm
at VDS=60 mV. Markers: measurements, solid lines:model, dashed lines in (b):
θint=0 V-1. Different colors represent different LFN contributions.
Acknowledgments: This work has received funding from the European Union’s Horizon2020 research and innovation programme under grant agreements NoGrapheneCore3 881603, from Ministerio de Ciencia, Innovación y Universidades under grant agreements RTI2018-097876-B-C21(MCIU/ AEI/ FEDER, UE), PID2021-127840NB-I00(MCIN/AEI/FEDER, UE), and CNS2023-143727 RECAMBIO (MCIN/AEI/ 10.13039 /501100011033).
This work is also supported by the European Union Next Generation EU/PRTR research project.
