[paper] GaN HEMTs: Past, development, and future

Haorui Luo^ab, Wenrui Hua^a, Yongxin Guo^ab,

On large-signal modeling of GaN HEMTs: Past, development, and future

Chip, 2023, 100052

DOI: 10.1016/j.chip.2023.100052.

^a Department of Electrical and Computer Engineering, National University of Singapore

^b National University of Singapore (Suzhou) Research Institute, China

Abstract : In the past few decades, circuits based on gallium nitride high electron mobility transistor (GaN HEMT) have demonstrated exceptional potential in a wide range of high-power and high-frequency applications, such as the new generation mobile communications, object detection, consumer electronics, etc. As a critical intermediary between GaN HEMT devices and circuit-level applications, GaN HEMT large-signal models play a pivotal role in the design, application and development of GaN HEMT devices and circuits. This review provides an in-depth examination of the advancements in GaN HEMT large-signal modeling in recent decades. Detailed and comprehensive coverage of various aspects of GaN HEMT large-signal model are offered, including large-signal measurement setups, classical formulation methods, model classification, non-ideal effects, etc. In order to better serve follow-up research, this review also explores potential future directions for the development of GaN HEMT large-signal modeling.

FIG : Timeline of some typical GaN HEMT large-signal models.

Funding : This work was supported in part by the National Research Foundation (NRF) of Singapore under Grant NRF-CRP17-2017-08.