Shih-En Huang1, Student Member, IEEE, Pin Su1, Member, IEEE,
and Chenming Hu1,2, Life Fellow, IEEE
S-curve Engineering for ON-state Performance
using Anti-ferroelectric/Ferroelectric Stack Negative-Capacitance FinFET
2021 - techrxiv.org
1 Department of Electronics Engineering & Institute of Electronics, National Chiao Tung University, Hsinchu 30010, Taiwan
2 Department of Electrical Engineering and Computer Science, University of California at Berkeley
Abstract: This work investigates the S-curve engineering by exploiting the anti-ferroelectric (AFE)/ferroelectric (FE) stack negative-capacitance FinFET (NC-FinFET) to improve both the subthreshold swing and ON-state current (ION). The capacitance matching and ON-state performance are evaluated by using a short-channel AFE/FE stack NC-FinFET model. Our study indicates that the AFE/FE gate-stack can theoretically achieve surprising improvements to the OFF-state current (IOFF) and ION relative to IRDS projections. There is significant long-term advantage to IC power consumption and speed if materials with certain AFE and FE characteristics can be developed and introduced into IC manufacturing.
Fig: (a) Equivalent capacitance network of the AFE/FE stack NC-FinFET. The Cafe, Cfe and Cint are the anti-ferroelectric capacitance, ferroelectric capacitance and the internal capacitance, respectively. (b) Capacitance matching comparison at source end shows that the AFE/FE stack improves the high AV region toward high VGS.
Acknowledgment: The authors would like to thank anonymous referees for critical reading of the manuscript and valuable feedback. This work was supported in part by “Center for the Semiconductor Technology Research” from The Featured Areas Research Center Program within the framework of the Higher Education Sprout Project by the Ministry of Education (MOE), Taiwan, and in part by the Ministry of Science and Technology, Taiwan, under contracts 110-2634-F-009-027 and 110-2218-E-A49-014-MBK.
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