Wednesday, 25 May 2011

Papers for curious people... (may 25th 2011)

CMOS Silicon Physical Unclonable Functions Based on Intrinsic Process Variability

Stanzione, S.  Puntin, D.  Iannaccone, G. 
Page(s): 1456 - 1463
Digital Object Identifier : 10.1109/JSSC.2011.2120650

This paper presents an extreme-low-power mixed-signal CMOS integrated circuit for product identification and anti-counterfeiting, which implements a physical unclonable function operating with a challenge-response scheme. We devise a series of circuits and algorithmic solutions based on the use of a process monitor and on the prediction of the erratic response bits which allow to suppress the effects of temperature, voltage supply and process variations in order to obtain a robust and reliable b... Read More »


A Supply-Rail-Coupled eTextiles Transceiver for Body-Area Networks

Mercier, P. P.  Chandrakasan, A. P. 
Page(s): 1284 - 1295
Digital Object Identifier : 10.1109/JSSC.2011.2120690

This paper presents a transceiver that communicates over electronic textiles as an alternative, energy-efficient communication medium for body-area network (BAN) applications. The proposed eTextiles network architecture consists of a two-wire conductive yarn medium, body-worn nodes, and a basestation used for data collection and medium-access control. Fabricated in 0.18 $mu$m CMOS technology, the eTextiles transceiver employs supp... Read More »

Statistical Modeling and Simulation of Threshold Variation Under Random Dopant Fluctuations and Line-Edge Roughness

Ye, Y.  Liu, F.  Chen, M.  Nassif, S.  Cao, Y. 
Page(s): 987 - 996
Digital Object Identifier : 10.1109/TVLSI.2010.2043694

The threshold voltage $({V}_{rm th})$ of a nanoscale transistor is severely affected by random dopant fluctuations and line-edge roughness. The analysis of these effects usually requires atomistic simulations which are too expensive in computation for statistical design. In this work, we develop an efficient SPICE simulation method and statistical variation model that accurately predict threshold variation as a function of dopant ... Read More »

On Functional Broadside Tests With Functional Propagation Conditions

Pomeranz, I.  Reddy, S. M. 
Page(s): 1094 - 1098
Digital Object Identifier : 10.1109/TVLSI.2010.2043695

Functional broadside tests were defined as broadside tests where the scan-in state is a reachable state. This ensures that during the functional capture cycles of the test, the circuit visits states that it can also visit during functional operation. As a result, it avoids overtesting that may occur with unreachable states. However, the scan-out operation at the end of a functional broadside test allows the observation of any fault effects that reached the state variables at the end of the secon... Read More »


Broadside and Functional Broadside Tests for Partial-Scan Circuits

Pomeranz, I.  Reddy, S. M. 
Page(s): 1104 - 1108
Digital Object Identifier : 10.1109/TVLSI.2010.2044049

Functional broadside tests were defined to address overtesting that may occur due to the detection of delay faults under nonfunctional operation conditions. Such conditions are made possible by scanning in unreachable states. Functional broadside tests were defined and studied in the context of full-scan circuits. In this work, we study the definition of broadside and functional broadside tests in partial-scan circuits. A unique property we show is that if the unscanned state variables are obser... Read More »

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