Wednesday, 25 May 2011

Papers in IEEE TED, vol 58, issue 6 (june 2011)

An Efficient Robust Algorithm for the Surface-Potential Calculation of Independent DG MOSFET

Jandhyala, S.  Mahapatra, S. 
Page(s): 1663 - 1671
Digital Object Identifier : 10.1109/TED.2011.2131654

Although the recently proposed single-implicit-equation-based input voltage equations (IVEs) for the independent double-gate (IDG) MOSFET promise faster computation time than the earlier proposed coupled-equations-based IVEs, it is not clear how those equations could be solved inside a circuit simulator as the conventional Newton–Raphson (NR)-based root finding method will not always converge due to the presence of discontinuity at the G-zero point (GZP) and nonremovable singularities in ... Read More »

Statistical Model of Line-Edge and Line-Width Roughness for Device Variability Analysis

Hiraiwa, A.  Nishida, A.  Mogami, T. 
Page(s): 1672 - 1680
Digital Object Identifier : 10.1109/TED.2011.2131144

The authors propose a model of line-edge and line-width roughness (LER and LWR) of actual device patterns, which received some smoothing steps, for accurate estimation of device variability. The model assumes that LER/LWR has originally an exponential autocorrelation function (ACF) and is smoothed using another exponential function. The power spectrum of this ACF almost completely fits the experimental one of polycrystalline silicon lines, which were formed using plasma etching. The authors inve... Read More »

A Physics-Based Analytical Compact Model for the Drift Region of the HV-MOSFET

Bazigos, A.  Krummenacher, F.  Sallese, J.-M.  Bucher, M.  Seebacher, E.  Posch, W.  Moln??r, K.  Tang, M. 
Page(s): 1710 - 1721
Digital Object Identifier : 10.1109/TED.2011.2119487

This paper presents a novel physics-based analytical compact model for the drift region of a high-voltage metal–oxide–semiconductor field-effect transistor (HV-MOSFET). According to this model, the drift region is considered as a simple 1-D problem, just as that of a low-voltage inner MOS transistor. It exploits the charge-sheet approximation and performs linearization between the charge in the drift region and the surface potential. The drift region model combined with the standar... Read More »

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