The duration of the grant will be for four years. The monthly salary will be about 1000 Euro/month. The position will start in January 2011.
The candidate should have a Bachelor or Master degree in Electrical Engineering, Electronic Engineering, Telecommunication Engineering or Physics. A good background in Semiconductor Physics, Semiconductor Devices, or Integrated Circuit Design will be highly appreciated.
The work to be done by the candidate will be focused on the development of new techniques of characterization and modeling of novel advanced semiconductor devices, in particular nanoscale MOSFETs or III-V devices. It will be related to several European projects in which the hosting group participates, in particular the COmpact MOdelling Netwok (COMON), that is led by the hosting group (the so-called NEPHOS group)
The NEPHOS group at URV is one of the most powerful teams in Europe in the area of compact modeling of semiconductor devices.
Required documents for applicants
Applicants are required to send to the address specified below the following documents (in English or Spanish):
1) a full Curriculum Vitae (as complete as possible) with passport number
2) Copy of their diploma
3) copy of their passport
4) Academic certificate including their marks (it is important that the number of hours or credits of each subject appears). It is also very important that the document specifies what is the minimum mark for passing a given subject and what is the maximum mark that can be awarded.
Candidates are requested to send their documents by e-mail to:
Prof. Benjamin Iñiguez
Department of Electronic, Electrical and Automatic Control Engineering
Universitat Rovira i Virgili (URV)
Avinguda Països Catalans, 26
Tel: +34977558521 Fax:+34977559610
You can contact Prof. Benjamin Iñiguez (Benjamin.Iniguez@gmail.com) for more information