Wednesday, 26 May 2010

IEEE papers in May 2010

Why the Universal Mobility Is Not

Cristoloveanu, S.  Rodriguez, N.  Gamiz, F. 
Digital Object Identifier : 10.1109/TED.2010.2046109
Examples taken from ultrathin silicon-on-insulator (SOI) transistors tend to contradict the universality of mobility-field dependence. We revisit the meaning of the effective field concept and its implications on the universal mobility curve (UMC). Poisson–Schroedinger simulations point out the inappropriateness of the standard definitions of effective field when dealing with SOI or double-gate devices. Different carrier distributions can lead to the same value of the effective fie... Read More »

Compact and Distributed Modeling of Cryogenic Bulk MOSFET Operation

Akturk, A.  Holloway, M.  Potbhare, S.  Gundlach, D.  Li, B.  Goldsman, N.  Peckerar, M.  Cheung, K. P. 
Digital Object Identifier : 10.1109/TED.2010.2046458

We have developed compact and physics-based distributed numerical models for cryogenic bulk MOSFET operation down to 20 K to advance simulation and first-pass design of device and circuit operation at low temperatures. To achieve this, we measured and simulated temperature-dependent current–voltage characteristics of 0.16- and 0.18-$muhbox{m}$ bulk MOSFETs. Our measurements indicate that these MOSFETs supply approxim... Read More »


Compact Modeling of Experimental n- and p-Channel FinFETs

Song, J.  Yuan, Y.  Yu, B.  Xiong, W.  Taur, Y. 
Digital Object Identifier : 10.1109/TED.2010.2047067

The analytic potential model for symmetric double-gate MOSFETs is verified and calibrated with experimental n- and p-channel FinFET data over a wide range of gate lengths and bias regions. Quantum mechanical effects are incorporated in the model to reproduce the measured $C$$V$ characteristics. The long-channel mobility consists of both a phonon scat... Read More »

Compact Modeling of a Magnetic Tunnel Junction—Part I: Dynamic Magnetization Model

Kammerer, J.-B.  Madec, M.  Hébrard, L. 
Digital Object Identifier : 10.1109/TED.2010.2047070

The potential application range of spintronic devices is wide. However, few works were carried out in the field of compact modeling of such devices. The lack of compact models dramatically increases the design complexity of circuits using spintronic devices. In this paper, focus is made on magnetic tunnel junctions (MTJs). It is presented in a set of two papers: the first part deals with the magnetic aspects of the MTJ, whereas the second one covers the electrical aspects. In this part, a... Read More »



Compact Modeling of a Magnetic Tunnel Junction—Part II: Tunneling Current Model

Madec, M.  Kammerer, J.-B.  Hébrard, L. 
Digital Object Identifier : 10.1109/TED.2010.2047071

The potential application range of spintronic devices is wide. However, a few works were carried out in the field of compact modeling of such devices. The lack of compact models dramatically increases the design complexity of circuits using spintronic devices. In this paper, focus is made on magnetic tunnel junctions (MTJs). It is presented in a set of two papers: The first part deals with the magnetic aspects of the MTJ, whereas the second one covers the electrical aspects. In this part,... Read More »



Compact Modeling of LDMOS Transistors for Extreme Environment Analog Circuit Design

Kashyap, A. S.  Mantooth, H. A.  Vo, T. A.  Mojarradi, M. 
Digital Object Identifier : 10.1109/TED.2010.2046073

The cryogenic characterization (93 K/$- hbox{180} ^{circ}hbox{C}$ to 300 K/27 $^{circ}hbox{C}$) and compact modeling of a high-voltage (HV) laterally diffused MOS (LDMOS) transistor that exhibits carrier freeze-out are presented in this paper. Unlike low-voltage MOS devices, it was observed that HVMOS structures experience freeze-out effects at much higher t... Read More »



Variability Analysis of TiN Metal-Gate FinFETs

Endo, K.  O'uchi, S.  Ishikawa, Y.  Liu, Y.  Matsukawa, T.  Sakamoto, K.  Tsukada, J.  Yamauchi, H.  Masahara, M. 
Digital Object Identifier : 10.1109/LED.2010.2047091

Variability of TiN FinFET performance is comprehensively studied. It is found that the variation of the $V_{rm th}$ in the FinFET occurs and the standard deviations of the $V_{rm th}$ of nMOS and pMOS FinFETs are almost the same. From the analytical results, it is found that the $V_{rm th}$ var... Read More »

Transistor mismatch in 32 nm high-k metal-gate process



 

Extraction Technique of Trap Densities in Thin Films and at Insulator Interfaces of Thin-Film Transistors

Kimura, M. 
Digital Object Identifier : 10.1109/LED.2010.2045221

We have developed an extraction technique of trap densities in thin films and at insulator interfaces of thin-film transistors (TFTs). These trap densities can be extracted and separated from capacitance–voltage and current–voltage characteristics by numerically calculating $Q = CV$ , Poisson equation, carrier density equations, and Gauss' law. The outstanding advantages are intuitive understandability and a s... Read More »









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