Papers in IEEE TED, Vol 56 (8), Aug. 2009

Random-Dopant-Induced Variability in Nano-CMOS Devices and Digital Circuits

Li, Y.; Hwang, C.-H.; Li, T.-Y.
Page(s): 1588-1597

A New Three-Dimensional Capacitor Model for Accurate Simulation of Parasitic Capacitances in Nanoscale MOSFETs

Guo, J.-C.; Yeh, C.-T.
Page(s): 1598-1607

A Simple Semiempirical Short-Channel MOSFET Current–Voltage Model Continuous Across All Regions of Operation and Employing Only Physical Parameters

Khakifirooz, A.; Nayfeh, O. M.; Antoniadis, D.
Page(s): 1674-1680