The 2008 IEEE International Electron Devices Meeting (IEDM) will be held in the Hilton San Francisco Hotel in San Francisco, CA, from December 15 to 17 2008.
IEDM is the top conference in the field of electron devices. It is of course the most competitive one. Only truly outstanding papers are accepted. It is highly recommended that experimental results are shown, also some good simulation papers can be also accepted.
Two short courses will be held on Sunday, december 14: 22 nm Technology and More than Moore: Technologies for Functional Diversification.
This year there will also be plenary presentations by Peter Fromherz of Max Planck Institute; Tatsuo Saga from Sharp; Stefan K. Lai from Ovonyx, Inc.
Deadline for abstract submissions is June 27 2008 at 5.00 pm Pacific Standard Time.
Topics include all aspects related to electron devices, grouped in several areas:
-CMOS DEVICES & TECHNOLOGY (CDT)
-CHARACTERIZATION, RELIABILITY and YIELD (CRY)
-DISPLAYS, SENSORS, AND MEMS (DSM)
-MEMORY TECHNOLOGY (MT)
-MODELING AND SIMULATION (MS)
-PROCESS TECHNOLOGY (PT)
-QUANTUM, POWER, AND COMPOUND SEMICONDUCTOR DEVICES (QPC)
-SOLID STATE AND NANOELECTRONIC DEVICES (SSN)
This year the area of Modeling and Simulation (MS) explicitly includes "physical and compact models for devices and interconnects". And it is said "Submissions should advance the art of modeling and simulation or apply existing techniques to gain new insights into devices".
If you have important results to show, I vively recommend to send an abstract to IEDM. It is the best place to present them, and to discuss them with the top people. Even if your abstract is rejected, or if you do not have any new results to show, I encourage researchers to attend IEDM, including compact modeling researchers.