#paper K. Harrouche, R. Kabouche, E. Okada and F. Medjdoub, "High Performance and Highly Robust AlN/GaN HEMTs for Millimeter-Wave Operation," in IEEE Journal of the Electron Devices Society, vol. 7, pp. 1145-1150, 2019. doi: 10.1109/JEDS.2019.2952314 https://t.co/jNkb9EJ9Zn https://t.co/eVGvTeltX5

#paper K. Harrouche, R. Kabouche, E. Okada and F. Medjdoub, "High Performance and Highly Robust AlN/GaN HEMTs for Millimeter-Wave Operation," in IEEE Journal of the Electron Devices Society, vol. 7, pp. 1145-1150, 2019.
doi: 10.1109/JEDS.2019.2952314 https://t.co/jNkb9EJ9Zn pic.twitter.com/eVGvTeltX5

— Wladek Grabinski (@wladek60) November 19, 2019

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November 19, 2019 at 02:54PM
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#paper Faber, H., Anthopoulos, T.D. Adding a new layer to ‘more than Moore’. Nat Electron 2, 497–498 (2019) doi:10.1038/s41928-019-0329-8 https://t.co/0DGQKfB8PA https://t.co/BvjI3yrezw

#paper Faber, H., Anthopoulos, T.D. Adding a new layer to ‘more than Moore’. Nat Electron 2, 497–498 (2019) doi:10.1038/s41928-019-0329-8 https://t.co/0DGQKfB8PA pic.twitter.com/BvjI3yrezw

— Wladek Grabinski (@wladek60) November 19, 2019

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#paper D. Mahajan, S. A. Albahrani, R. Sodhi, T. Eguchi and S. Khandelwal, "Physics-Oriented Device Model for Packaged GaN Devices," in IEEE TPE doi: 10.1109/TPEL.2019.2953060 https://t.co/fZEFBTrvHg https://t.co/aFN8iGGVDA

#paper D. Mahajan, S. A. Albahrani, R. Sodhi, T. Eguchi and S. Khandelwal, "Physics-Oriented Device Model for Packaged GaN Devices," in IEEE TPE
doi: 10.1109/TPEL.2019.2953060 https://t.co/fZEFBTrvHg pic.twitter.com/aFN8iGGVDA

— Wladek Grabinski (@wladek60) November 19, 2019

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Czochralski IEEE Milestone Event (Nov.15 2019) Hochschule für Technik und Wirtschaft Berlin University of Applied Sciences - HTW Berlin https://t.co/MzxFrFUbTf #paper https://t.co/4HZPQe4WeA

Czochralski IEEE Milestone Event (Nov.15 2019)
Hochschule für Technik und Wirtschaft Berlin University of Applied Sciences - HTW Berlin https://t.co/MzxFrFUbTf #paper pic.twitter.com/4HZPQe4WeA

— Wladek Grabinski (@wladek60) November 13, 2019

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#paper F. Ávila Herrera, et al., "Leading-Edge Thin-Layer MOSFET Potential Modeling Toward Short-Channel Effect Suppression and Device Optimization," in IEEE JEDS doi: 10.1109/JEDS.2019.2948648 doi: 10.1109/EDTM.2019.8731246 https://t.co/7E9755kTOW https://t.co/vh1Zy9BifJ

#paper F. Ávila Herrera, et al., "Leading-Edge Thin-Layer MOSFET Potential Modeling Toward Short-Channel Effect Suppression and Device Optimization," in IEEE JEDS
doi: 10.1109/JEDS.2019.2948648
doi: 10.1109/EDTM.2019.8731246https://t.co/7E9755kTOW pic.twitter.com/vh1Zy9BifJ

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8th International NRNU MEPhI Workshop

it is our pleasure to announce the 8th International Workshop and school on computer aided design of integrated circuits for physical experiments to be held at NRNU MEPhI on November 25-27, 2019. The Workshop and school are organized by NRNU MEPhI jointly with Cadence Design Systems. The program and further information are available via site cad.mephi.ru.

Participation in the event is free of charge but registration is necessary.

E. Atkin, NRNU MEPhI event secretary,

#paper Tengteng Lu, Zhen Li, Chao Luo, Jun Xu, Weicheng Kong, and Guoping Guo Characterization and Modeling of 0.18µm CMOS Technology at sub-Kelvin Temperature IEEE TED 2018 https://t.co/4lkzLP9jvz https://t.co/4QUcjG94EY

#paper Tengteng Lu, Zhen Li, Chao Luo, Jun Xu, Weicheng Kong, and Guoping Guo
Characterization and Modeling of 0.18µm CMOS Technology at sub-Kelvin Temperature
IEEE TED 2018 https://t.co/4lkzLP9jvz pic.twitter.com/4QUcjG94EY

— Wladek Grabinski (@wladek60) November 7, 2019

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November 07, 2019 at 03:27PM
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