Aug 14, 2019

Flexible Design Pursues PDK, Power; Battery startups aim to enable #flexible #electronics https://t.co/iVc4Wzr78i #paper https://t.co/Pt78L534lg


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August 14, 2019 at 04:53PM
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Aug 13, 2019

#Huawei to help create nation's first #opensource #foundation https://t.co/OGplZqOI1S https://t.co/Xsdh3Zva8y


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August 13, 2019 at 09:43AM
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Aug 12, 2019

[papers] Compact Modeling

Q. C. Nguyen, P. Tounsi, J. Fradin and J. Reynes, "Development of SiC MOSFET Electrical Model and Experimental Validation: Improvement and Reduction of Parameter Number," 2019 MIXDES - 26th International Conference "Mixed Design of Integrated Circuits and Systems", Rzeszów, Poland, 2019, pp. 298-301.
doi: 10.23919/MIXDES.2019.8787050
Abstract: In this work, a new approach for electrical modeling of Silicon Carbide (SiC) MOSFET is presented. The developed model is inspired from the Curtice model which is using a mathematic function reflecting MOSFET output characteristics. The first simulation results showed good agreement with measurements. Improvement is needed in order to increase model accuracy and to take into account the influence of the junction temperature on device characteristics.

D. Kasprowicz, "Semiconductor Device Parameter Extraction Based on I–V Measurements and Simulation," 2019 MIXDES - 26th International Conference "Mixed Design of Integrated Circuits and Systems", Rzeszów, Poland, 2019, pp. 321-326.
doi: 10.23919/MIXDES.2019.8787195
Abstract: The paper presents a method for extracting the physical parameters of a semiconductor device based on the measurements of its electrical response (e.g. transfer characteristics) combined with simulation. Such extraction is usually performed by an optimization algorithm seeking device-parameter values that minimize the difference between the measured response and its simulated equivalent. The proposed approach needs only an average of 13 objective-function evaluations, i.e. device simulations, to extract three parameters of a single device. If the parameters of a group of devices of the same type are to be extracted, the average number of simulations drops to four per device. This number is much smaller than in conventional optimization procedures. Thus, the proposed procedure can be used even in the absence of an accurate compact model, when time-consuming TCAD simulation must be used to determine the device’s response.

D. Tomaszewski, J. Malesińska, G. Głuszko and K. Kucharski, "Current vs Substrate Bias Characteristics of MOSFETs as a Tool for Parameter Extraction," 2019 MIXDES - 26th International Conference "Mixed Design of Integrated Circuits and Systems", Rzeszów, Poland, 2019, pp. 87-91.
doi: 10.23919/MIXDES.2019.8787068
Abstract: An application of the drain current vs substrate bias characteristics of MOSFETs for the device parameter extraction is presented. Modeling of the substrate bias effect on the MOSFET drain current is briefly discussed. A method of the MOSFET characterization is formulated. It requires a measurement of two I(V) characteristics, including the ID(VBS) smooth curve measured in a "sweep" mode. The method allows to extract the threshold voltage parameters and to estimate the in-depth doping profile in the substrate. The proposed approach is demonstrated using I(V) data of the MOSFETs manufactured in ITE in a bulk CMOS process.
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#Huawei announces #opensource Harmony OS https://t.co/3oBWFgcXVc https://t.co/kxN86XBMyO


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August 12, 2019 at 11:22AM
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Aug 1, 2019

Horizon Europe - Commission announces top experts to shape Horizon Europe (2021-2027) missions https://t.co/5s7twEGfG4 #paper https://t.co/YPw6s3cUqX


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August 01, 2019 at 12:18PM
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Jul 30, 2019

[mos-ak] Joint ESSDERC/ESSCIRC Tutorial in Krakow (PL) on Sept.23, 2019

Joint ESSDERC/ESSCIRC Tutorial: 
Nanoscale Technology – Transistor Modeling – IC Design 
Auditorium Maximum, the Jagiellonian University
Krakow (PL) on Sept.23, 2019

Together with local organization team, MOS-AK Association invites you to Joint ESSDERC/ESSCIRC Tutorial: Nanoscale Technology – Transistor Modeling – IC Design which will be organized at Auditorium Maximum of the Jagiellonian University in Krakow (PL) on Sept.23, 2019

Our joint ESSDERC/ESSCIRC Tutorial aims to provide in-depth coverage of highly relevant R&D topics by world-class experts. We will discuss and present the frontiers of electron device modeling with emphasis on the complete UT SOI development chain, reviewing the nanoscale level technologies, devices TCAD numerical simulations, thru its simulation-aware compact/SPICE modeling up to selected topics of the transistor level IC design for advanced applications. This joint tutorial is designed for academic researchers, device process engineers who are interested in device modeling; academic/industrial ICs designers (to explore RF/Analog/Mixed-Signal) and those starting in these areas as well as device fabrication, electrical characterization, modeling and parameter extraction engineers. The content will be beneficial for anyone who needs to learn what is really behind the IC fabrication and its simulation in using modern SPICE/Verilog-A device models (tutorial agenda listed below).

Joint ESSDERC/ESSCIRC Tutorial will be followed (Sept. 24-26, 2019) by four TRACK4: "'Compact Modeling of Devices and Circuits" Sessions with invited talk "The Synergy SPICE – Compact Models" by Prof. Andrei Vladimirescu and 11 regular conference papers (see all the details below)

Tutorial Agenda: 
8:00 – 8:30 – Registration
8:30 – 9:15 – Technology: Guillaume Besnard, SOITEC (F) – UT SOI Processing and Device Fabrication
9:15 – 10:00 – Technology: Ahmed Nejim, Silvaco Inc. (USA) – UT SOI TCAD Numerical Process/Device Simulation
10:00 – 10:30 – Coffee break
10:30 – 11:15 – Devices: Thierry Poiroux, CEA–Leti (F) – Compact modeling for FDSOI technologies: Main challenges and possible solutions
11:15 – 12:00 – Devices: Roberto Murphy, INAOE (MX) – RF Electrical Characterization
12:30 – 14:00 – Lunch
14:00 – 14:45 – Design: Christian Enz, EPFL (CH) – Systematic Design of Low-power Analog/RF CMOS Circuits using the Inversion Coefficient
14:45 -15:30 – Design: Humberto Andrade da Fonseca (Cadence, US) – Advanced SOI Design and Reliability/Ageing Simulations
15:30 – 16:00 – Coffee break
16:00 – 17:00 – Panel discussion
Venue:
Auditorium Maximum, the conference center of the Jagiellonian University
ul. Krupnicza 33, 
31-123 Kraków (PL)
Online registrations will be accepted until 20 August 2019.  
https://esscirc-essderc2019.org/how-to-register/  

On the behalf of the local organization team
Wladek Grabiński (GMC, CH)
Daniel Tomaszewski (ITE, PL)
ESSDERC/ESSCIRC
TRACK4: Compact Modeling of Devices and Circuits
https://esscirc-essderc2019.org/program/
Tuesday September 24, 2019 (14:00-15:20)

IdTimePaper Title/Location/Session
5189 14:00 -
14:26		Cryogenic MOSFET Threshold Voltage Model
Location: Seminar room
Session: Compact Modeling Under Cryogenic Conditions 
5246 14:26 -
14:53		Subthreshold Mismatch in Nanometer CMOS at Cryogenic Temperatures
Location: Seminar room
Session: Compact Modeling Under Cryogenic Conditions 
5216 14:53 -
15:20		Test Chip for Identifying Spice-Parameters of Cryogenic BiFET Circuits
Location: Seminar room
Session: Compact Modeling Under Cryogenic Conditions 
Wednesday September 25, 2019 (10:20-12:00)
IdTimePaper Title/Location/Session
5226 10:20 -
10:53		First Uni-Traveling Carrier Photodiode Compact Model Enabling Future Terahertz Communication System Design
Location: Seminar room
Session: Modeling of Compound Semiconductor Devices
5253 10:53 -
11:26		Impact of SiGe HBT Hot-Carrier Degradation on the Broadband Amplifier Output Supply Current
Location: Seminar room
Session: Modeling of Compound Semiconductor Devices 
5180 11:26 -
12:00		Monolithically Integrated GaN Power ICs Designed Using the MIT Virtual Source GaNFET (MVSG) Compact Model for Enhancement-Mode p-GaN Gate Power HEMTs, Logic Transistors and Resistors
Location: Seminar room
Session: Modeling of Compound Semiconductor Devices 
Wednesday September 25, 2019 (14:20-15:40)
IdTimePaper Title/Location/Session
5363 14:20 -
14:46		The Synergy SPICE – Compact Models
Location: Seminar room
Session: Advances in MOSFET Modeling 
5141 14:46 -
15:13		Comparison of Modeling Approaches for Transistor Degradation: Model Card Adaptations Vs Subcircuits
Location: Seminar room
Session: Advances in MOSFET Modeling 
5316 15:13 -
15:40		FOSS EKV2.6 Verilog-A Compact MOSFET Model
Location: Seminar room
Session: Advances in MOSFET Modeling 
Thursday September 26, 2019 (10:20-12:00)
IdTimePaper Title/Location/Session
5251 10:20 -
10:53		Compact Analytical Model for Trap-Related Low Frequency Noise in Junctionless Transistors
Location: Medium Aula A
Session: Modeling of Trap Effects and Noise 
5329 10:53 -
11:26		Compact Modeling of Low Frequency Noise and Thermal Noise in Junction Field Effect Transistors
Location: Medium Aula A
Session: Modeling of Trap Effects and Noise 
5239 11:26 -
12:00		Evaluation of Static/Transient Performance of TFET Inverter Regarding Device Parameters Using a Compact Model
Location: Medium Aula A
Session: Modeling of Trap Effects and Noise 
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Jul 23, 2019

#IEEE Update of the International Roadmap for Devices and Systems (#IRDS) Sets Course for Computer and Electronics Industry Growth https://t.co/WwvxXl4Sq8 #paper https://t.co/ZOwLjWV0Sr


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July 23, 2019 at 05:31PM
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