New papers (October 27, 2010)

• Why Quasi-Monte Carlo is Better Than Monte Carlo or Latin Hypercube Sampling for Statistical Circuit Analysis (abstract)
• Separate Extraction of Source, Drain, and Substrate Resistances in MOSFETs With Parasitic Junction Current Method (abstract)
• A Physics-Based Compact Model for Polysilicon Resistors (abstract)
• The Equivalent-Thickness Concept for Doped Symmetric DG MOSFETs (abstract)
• An Analytical I–V Model for Surrounding-Gate Transistors That Includes Quantum and Velocity Overshoot Effects (abstract)
• Failure of the Scalar Dielectric Function Approach for the Screening Modeling in Double-Gate SOI MOSFETs and in FinFETs (abstract)
• Device Physics and Characteristics of Graphene Nanoribbon Tunneling FETs (abstract)
• Analytical Threshold Voltage Model Including Effective Conducting Path Effect (ECPE) for Surrounding-Gate MOSFETs (SGMOSFETs) With Localized Charges (abstract)
  

And other papers that I've found interesting:

• Dual Threshold Voltage Organic Thin-Film Transistor Technology (abstract)
• Complementary Organic Circuits Using Evaporated $ hbox{F}_{16}hbox{CuPc}$ and Inkjet Printing of PQT (abstract)
• Low-Voltage High-Performance Pentacene Thin-Film Transistors With Ultrathin PVP/High- $kappa$ HfLaO Hybrid Gate Dielectric (abstract)
• High-Performance Pentacene Thin-Film Transistors Fabricated by Organic Vapor-Jet Printing (abstract)
• Magnetic-Field Area Sensor Using Poly-Si Micro Hall Devices (abstract)
• On-Chip Aging Sensor Circuits for Reliable Nanometer MOSFET Digital Circuits (abstract)
• On Undetectable Faults and Fault Diagnosis (abstract)
  

Job offers in LinkedIn: RF Modeling Device Engineer

Remember, this is only for information. We're not connected to them!

HIRING - Peregrine Semiconductor - RF Modeling Device Engineer

Click Here to Apply: https://home.eease.adp.com/recruit/?id=531727

Job Description:
This position is responsible for:
Member of team responsible for device modeling of Peregrine’s patented high-performance UltraCMOSTM silicon-on-sapphire CMOS process and packaging technology. The candidate will work closely with modeling engineers and CAD to support our design groups and external foundry customers.

Roles & Responsibilities will include:
• Responsible for modeling of passive components.
• Responsible for parasitic analysis of RF active components and BEOL.
• Model extraction for components on-wafer, modules, and packages.
• Manufacturing data analysis to develop statistical and corner models.
• Test chip DOE development, layout, and measurement.
• Provide guidance to design teams on best practice.


Qualifications:

Minimum Requirements:
• Ph.D. in Physics or Electrical Engineering (MS okay with demonstrated experience)
• Understanding of RF device performance metrics
• Experience using SPICE like circuit simulators to develop sub-circuit models.
• Experience using EM simulators (HFSS, Momentum, etc.) to study device performance.
• Demonstrated ability to extract models from measured data.
• Demonstrated problem solving skills.

The following traits are highly valued:
• Strong programming background and ability to develop automation scripts.
• Experience with Matlab, ICCAP, or other tool for model extraction.
• Layout optimization for RF applications.
• Experience configuring and automating test equipment.
• Large signal RF device characterization.

[mos-ak] MOS-AK/GSA Seville Workshop Press Release

Press release:
"MOS-AK/GSA Modeling Working Group Holds Workshop in Seville"
can be found on the GSA site at
http://www.gsaglobal.org/news/article.asp?article=2010/1014

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Modelling people wanted...

I copy from LinkedIn:

Looking for PhD/ MS candidates in device physics , modelling back ground for one of the Semiconductor research and development centre at Bangalore .


see more...

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The Nobel Prize in Physics 2010 (graphene)

The Royal Swedish Academy of Sciences has decided to award the Nobel Prize in Physics for 2010 to Andre Geim and Konstantin Novoselov, both at University of Manchester, UK “for groundbreaking experiments regarding the two-dimensional material graphene”.


Andre Geim, Dutch citizen. Born 1958 in Sochi, Russia. Ph.D. 1987 from Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, Russia. Director of Manchester Centre for Meso-science & Nanotechnology, Langworthy Professor of Physics and Royal Society 2010 Anniversary Research Professor, University of Manchester, UK. 
Konstantin Novoselov, Brittish and Russian citizen. Born 1974 in Nizhny Tagil, Russia. Ph.D. 2004 from Radboud University Nijmegen, The Netherlands. Professor and Royal Society Research Fellow, University of Manchester, UK.

Read the press release...