Wednesday, 27 October 2010

New papers (October 27, 2010)

  • Why Quasi-Monte Carlo is Better Than Monte Carlo or Latin Hypercube Sampling for Statistical Circuit Analysis (abstract)
  • Separate Extraction of Source, Drain, and Substrate Resistances in MOSFETs With Parasitic Junction Current Method (abstract)
  • A Physics-Based Compact Model for Polysilicon Resistors (abstract)
  • The Equivalent-Thickness Concept for Doped Symmetric DG MOSFETs (abstract)
  • An Analytical I–V Model for Surrounding-Gate Transistors That Includes Quantum and Velocity Overshoot Effects (abstract)
  • Failure of the Scalar Dielectric Function Approach for the Screening Modeling in Double-Gate SOI MOSFETs and in FinFETs (abstract)
  • Device Physics and Characteristics of Graphene Nanoribbon Tunneling FETs (abstract)
  • Analytical Threshold Voltage Model Including Effective Conducting Path Effect (ECPE) for Surrounding-Gate MOSFETs (SGMOSFETs) With Localized Charges (abstract)

And other papers that I've found interesting:

  • Dual Threshold Voltage Organic Thin-Film Transistor Technology (abstract)
  • Complementary Organic Circuits Using Evaporated $ hbox{F}_{16}hbox{CuPc}$ and Inkjet Printing of PQT (abstract)
  • Low-Voltage High-Performance Pentacene Thin-Film Transistors With Ultrathin PVP/High- $kappa$ HfLaO Hybrid Gate Dielectric (abstract)
  • High-Performance Pentacene Thin-Film Transistors Fabricated by Organic Vapor-Jet Printing (abstract)
  • Magnetic-Field Area Sensor Using Poly-Si Micro Hall Devices (abstract)
  • On-Chip Aging Sensor Circuits for Reliable Nanometer MOSFET Digital Circuits (abstract)
  • On Undetectable Faults and Fault Diagnosis (abstract)

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