Sep 2, 2009

Post Doctoral Researcher - Device Physics

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Post Doctoral Researcher - Device Physics



Job ID
RES-0243997
Job type
Full-time Complementary
Work country
USA
Posted
19-Aug-2009
Work city
Yorktown Heights
Job area
Research
Travel
No travel
Job category
Research
Business unit
Res Sci&Tech
Job role
Research Scientist




Job role skillset
Physics


Job description
The position is for a post-doctoral candidate to work on numerical model development for carrier transport in heterostructure tunneling transistors. Specifically the principle responsibilties will be to develop a computer program that self-consistently calculates band-to-band tunneling in a eterojunction tunneling diode, compare the calcuation results with xperiments, and to adjust the physical assumptions in the model to match experiment.

The responsibilities will also be to impelment and develop a 2D version of this code for inclusion into IBM internal device simulation software. Required skills for the position will be a detailed knowledge of semiconductor device physics and carrier transport in semiconductors, numerical modeling techniques, and computer programming. The candidate must be self-motivated and work well in a goal-oriented, team environment.

Required
  • Basic knowledge in computer code development using a high-level programming language such as Fortran
  • Basic knowledge in numerical modeling of solid-state electronic systems
  • Basic knowledge in semiconductor device physics, with an emphasis on band structure and carrier transport
  • English: Intermediate


Preferred
  • Doctorate Degree
  • At least 2 years experience in computer code development using a high-level programming language such as Fortran
  • At least 2 years experience in numerical modeling of solid-state electronic systems
  • At least 1 year experience in semiconductor device physics, with an emphasis on band structure and carrier transport
  • At least 1 year experience in designing experiments, and interpretting experimental data

Device Simulation Engineer - Solar IC Resources Ltd

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  • Location: Surrey
  • Sector: Other
  • Job Hours: Full-Time
  • Job Position: Permanent
  • Job Role: Device Engineer
  • Company: IC Resources Ltd
  • Salary: Top-notch salary + bens
  • Job reference: J010691
  • Posted Date: 28 August 2009 13:01:32
They are currently searching for a Device Simulation Engineer (Solar) with the following key skills: Semiconductor, solar, solar cell, FORTRAN, Silvaco, modelling, device, III-V, simulation, manufacturing, jobs

The client is currently searching for a Device Simulation Engineer to be responsible for the modelling and simulation of solar cell devices. The role will involve working with FORTRAN code and upgrading the device modelling software. Performing day-to-day simulations will be required as well as looking into future requirements.

The successful candidate will have the following qualifications;

·Strong semiconductor device modelling experience (III-V)
·Modelling package knowledge (Silvaco, Synopsys, FORTRAN)
·Previous solar cell experience beneficial
·Excellent communication and leadership skills
·BSc in Physics, Electronics, Physics, Materials or equivalent

CMOS Device Modeling Engineer Job in IBM

Job description
IBM is seeking a CMOS Device Modeling Engineer to develop and maintain state of-the-art compact models. Included in this role are: DC and AC measurements, data integrity checking, model extraction, statistical model generation, corner model generation, model conversions, model to hardware checking, and integration in Design System model checking. You will be working on leading edge bulk and SOI technologies for digital, analog and CMOS RF applications interfacing with IBM and external circuit designers to define model requirements & providing leadership in the modeling area.
Required
  • Doctorate Degree in Engineering
  • At least 2 years experience in Apply Knowledge of Semiconductor Device Physics
  • Basic knowledge in Apply Knowledge of Compact Model Generation
  • Readiness to travel up to 10%; travelling 1 day a week
  • English: Fluent

Aug 31, 2009

2009 IEEE International SOI Conference

Oct. 5 - 8 October, 2009, Foster City, California

Ever increasing demand and advances in SOI and related technologies make it essential to meet to discuss new gains and accomplishments, as well as to consider new developments introduced in original papers presented at the conference.

AREAS of FOCUS
  • SOI device physics and modeling
  • Manufacturability and process integration of soi devices
  • Low-power SOI technology and circuit design infrastructure
  • SOI circuit applications (high-performance mpu, sram, asic, high-voltage, rf, analog, mixed mode, etc.)
  • SOI double & multiple gate/vertical channel structures; other novel SOI structures
  • New SOI structures, circuits, and applications (3d integration, displays, microactuators, novel memories, optics, etc.)
  • SOI reliability issues (hot-carrier effects, radiation effects, high-temperature effects, etc.)
  • SOI material science/modification, material characterization, manufacture, and substrate engineering.
  • SOI sensors, MEMS and RFIDs technology and applications
Read more...

Aug 25, 2009

ICMNE-2009

The International Conference Micro- and Nano-Electronics – 2009 (ICMNE-2009) including extended Session “Quantum Informatics” (QI-2009) will be held in October 5-9, 2009 at the holiday hotel “Lipki”, Zvenigorod, Moscow region, Russia. It will continue the series of All-Russian Conferences MNE-1999, MNE-2001, QI-2002, and International Conferences ICMNE-2003, QI-2004, ICMNE-2005, QI-2005. ICMNE-2007, QI-2007. Conference ICMNE is biannual event covering majority of area of micro- and nano-electronic technologies, physics and devices. ICMNE-2009 is focused on recent progress in that area. The Conference will include the exhibition on equipment for micro- and nano-electronics. Conference's scope:
  • Micro-, nano-electronic materials and films
  • Micro- and nano-electronic technologies and equipment
  • Metrology
  • Physics and technologies of micro- and nano-devices
  • Simulation and modeling
  • Quantum informatics
Read more...

Aug 19, 2009

IRPS 2010

The 2010 IEEE International Reliability Physics Symposium (IRPS) will be held in Anaheim, California, Canada, on May 2-6 2010. The venue will be Hyatt Regency Orange County.
For over 40 years, IRPS has been the premier conference for engineers and scientists to present new and original work in the area of microelectronic device reliability. IRPS is now co-sponsored by the IEEE Reliability Society and the IEEE Electron Devices Society. This co-sponsored event has drawn participants from the United States, Europe, Asia and all other parts of the world. IRPS'10 promotes the reliability and performance of integrated circuits and microelectronic assemblies through an improved understanding of failure mechanisms in the user’s environment, while demonstrating the latest state-of-the-art developments in electronic reliability.
The focus of the symposium is the 3-day plenary/parallel sessions featuring original work that identifies new microelectronic failure or degradation mechanisms, improves understanding of known failure mechanisms, demonstrates new or innovative analytical techniques, or demonstrates ways to build-in reliability. Specific areas to be addressed during the 2010 IRPS are reliability concerns associated with silicon (integrated circuits, discrete devices, MEMS, TFTs), Compound Semiconductor & Optoelectronics (GaAs, GaN, LEDs, displays, photovoltaics), and emerging technologies including organic electronics and nanotechnology.The deadline for abstract submission is October 2 2009.
In the Call for Papers, it is said that IRPS can accept papers which "identify new or improve our understanding of the physics of failure and modeling of mechanisms in electronic and optoelectronic devices, materials, and systems".Therefore, IRPS is a very attractive conference to present results on modeling of failure mechanisms.

Global Plastics Electronics Conference 2009

The 5th Global Plastic Electronics Conference and Exhibition will be held in Dresden, Germany, on October 27-29 2009. The venue will be the Maritim Hotel and Hotel Centre, Dresden.

This year's event will run for three days. The agenda is the following:
Day 1 will see forums run in paralell covering Integrated Smart Systems and Smart Fabrics and Intelligent Textiles. Days 2 and 3 both start with the Plenary session in the morning, followed by 5 paralell symposia in the afternoon.

The Global Plastic Electronics Conference and Exhibition will be a very appropriate place to learn about the recent advances on plastic electronics, and also to do networking. The plenary speakers are leading authorities in the field, as well as some of the presenters.

The Call for Posters is still open! It is a good oportunity to present a scientific poster and have a chance to meet the leaders in plastic electronics.Besides, more than 30 companies will participate in the Exhibition. As said in the brochure, Science and Industry will meet in this conference.