The International Symposium on Organic Semiconductor Materials and Devices (Symposium
E9) will be held during the
216th ECS Meeting in
Vienna, Austria. It will be the second
symposium in this series and the objective is to link processing and materials studies to devices
and technological applications. The symposium will cover a wide range of topics related to
broadly understood science and technology of organic/polymeric semiconductor materials,
processes, devices and applications. The list of topics of interests includes, but is not limited to,
the following:
• Chemistry of organic semiconductors and its impact on material and device characteristics;
organic and polymer semiconductors
• Physical phenomena underlying operation of organic/polymeric semiconductor devices
• Deposition methods: PVD, solution processing, printing and others
• Substrates: conductive and non-conductive, mechanically rigid and flexible
• Electronic devices: TFTs; ohmic contacts, dielectric-organic semiconductor material systems,
charge transport, modeling
• Photonic devices: light emitting diodes and solar cells
• Display and lighting applications
• Patterning of organic semiconductors to create desired device geometries
• Large area organic semiconductor electronics and photonics; roll-to-roll processing
• Reliability, stability, reproducibility of device characteristics
a one-page abstract must be
submitted electronically to ECS by 24 April 2009. A copy of the abstract must also be submitted
to the lead symposium organizer Prof. Jamal Deen, and be accompanied by a cover letter with full
contact details of the presenting author. This abstract should clearly indicate the purpose of the
work, the approach, the manner and the degree to which the work advances the field, and specific
results and their significance. All submitted abstracts will be peer-reviewed. Instructions for
preparing ECS meeting abstract and other relevant information are available on the ECS World
Wide Web Home Page at
http://www.electrochem.org. Any additional information can be
obtained from the symposium organizers listed below.
M. Jamal Deen, McMaster University, Electrical and Computer Engineering Department (CRL 226), 1280
Main Street West Hamilton, ON L8S 4K1, Canada. Tel: (905) 525-9140 ext. 27137, Fax: (905) 523 4407,
E-mail: jamal@mcmaster.ca
David Gundlach, National Institute of Standards and Technology , Semiconductor Electronics Division
(Bldg. 225, Room A369, M.S. 8120), 100 Bureau Drive, Gaithersburg, MD 20899-8120 USA. Tel: (301)
975-2048; Fax: (301) 975-8069, Email:David.Gundlach@NIST.gov
Benjamin Iñiguez, Department of Electronic Engineering, Universitat Rovira i Virgili, Avda. Països Catalans, 26, 43007 Tarragona-Spain. Tel: +34 977 558 521, Fax: +34977559605, Email:
benjamin.iniguez@urv.cat
Hagen Klauk, Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569 Stuttgart, Germany.
Tel: +49 711 689-1401; Fax: +49 711 689-1472; E-mail: H.Klauk@fkf.mpg.de
