Eva Bestelink, Student Member, IEEE, Kham M. Niang, Georgios Bairaktaris, Luca Maiolo, Francesco Maita, Kalil Ali, Andrew J. Flewitt, S. Ravi P. Silva
and Radu A. Sporea, Senior Member, IEEE
Compact Source-Gated Transistor Analog Circuits for Ubiquitous Sensors
In IEEE Sensors. Jul 18, 2020
Abstract: Silicon-based digital electronics have evolved over decades through an aggressive scaling process following Moore’s law with increasingly complex device structures. Simultaneously, large-area electronics have continued to rely on the same field-effect transistor structure with minimal evolution. This limitation has resulted in less than ideal circuit designs, with increased complexity to account for shortcomings in material properties and process control. At present, this situation is holding back the development of novel systems required for printed and flexible electronic applications beyond the Internet of Things. In this work we demonstrate the opportunity offered by the source-gated transistor’s unique properties for low-cost, highly functional large-area applications in two extremely compact circuit blocks. Polysilicon common-source amplifiers show 49 dB gain, the highest reported for a twotransistor unipolar circuit. Current mirrors fabricated in polysilicon and InGaZnO have, in addition to excellent current copying performance, the ability to control the temperature dependence (degrees of positive, neutral or negative) of output current solely by choice of relative transistor geometry, giving further flexibility to the design engineer. Application examples are proposed, including local amplification of sensor output for improved signal integrity, as well as temperature-regulated delay stages and timing circuits for homeostatic operation in future wearables. Numerous applications will benefit from these highly competitive compact circuit designs with robust performance, improved energy efficiency and tolerance to geometrical variations: sensor front-ends, temperature sensors, pixel drivers, bias analog blocks and high-gain amplifiers.
FIG: a) Photomicrograph of a typical polysilicon SGT fabricated; b) Driver M1 output characteristics (black curves, VGmax = -15 V, step 0.5 V) and superimposed M2 load line (orange, VG = 0 V). VSAT1 occurs as a result from pinch-off at the source and VSAT2 represents channel pinch-off of the parasitic FET.
Acknowledgment: R.A.S. acknowledges the Royal Academy of Engineering of Great Britain for the support through the Research Fellowship (Grant No. 10216/110), the Royal Society of Great Britain through project ARES IES\R3\170059 and EPSRC for grants EP/R028559/1 and EP/R025304/1. K.M.N. and A.J.F. acknowledge the support of the Engineering and Physical Sciences Research Council (EPSRC) through project EP/M013650/1. R.A.S. thanks Prof John Shannon for technical discussions, Dr Nigel Young and Dr Michael Trainor for assistance with polysilicon device design and fabrication.
