EEE SSCS-EDS Distinguished Talks (Webinar) Low-power Circuits for IoT Dr. Jorge Fernandes, INESC-ID, Lisbon, Portugal. Next Thursday, June 25th, 2:00 PM (Brasilia Time, GMT-3) https://t.co/wJuF6ryZHW #paper https://t.co/6jrZWrKTAh

EEE SSCS-EDS Distinguished Talks (Webinar)
Low-power Circuits for IoT
Dr. Jorge Fernandes, INESC-ID, Lisbon, Portugal.
Next Thursday, June 25th, 2:00 PM (Brasilia Time, GMT-3) https://t.co/wJuF6ryZHW#paper pic.twitter.com/6jrZWrKTAh

— Wladek Grabinski (@wladek60) June 24, 2020

from Twitter https://twitter.com/wladek60

June 24, 2020 at 02:30PM
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[paper] AlGaN/AlN/GaN/AlGaN photodetector

Khaouani, M., Hamdoune, A., Bencherif, H., Kourdi, Z. and Dehimi, L. 

An ultra-sensitive AlGaN/AlN/GaN/AlGaN photodetector:

Proposal and investigation

Optik (2020). , 217, 164797

DOI:10.1016/j.ijleo.2020.164797 

Abstract: In this paper, an AlGaN/AlN/GaN/AlGaN photodetector high electron mobility transistor is designed and simulated. The proposed structure incorporates an AlN spacer layer between the AlGaN and GaN layers to ensure good control of the two-dimensional gas, which improve, in turn, the device controllability. Besides, an overall figures of merit assessment is performed to highlights the design benefits. The suggested device provides a very high responsivity of 0.2641 A/W, a photocurrent of 1.1 × 10−7 A, a suitable (Iilumination/Idark) rejection of 10.8, and a high efficiency η of about 77%. The photo and dark current is at 2 V, 87 mA and 8 mA, respectively. A subthreshold slope (SS) of 53 mV/V and 42 mV/V, and a transconductance gm of 260 ms/mm and 180 ms/mm are obtained. The proposed photodetector springly outperforms the HEMT PD designs previously proposed in the literature.

Fig: 2D-structure of AlGaN/AlN/GaN/AlGaN Photodetector HEMT

Acknowledgements: This work was supported by DGRSDT of Ministry of Higher education of Algeria. The work was done in the unit of research of materials and renewable energies (URMER).

[paper] Compact Modeling of Parasitic FET capacitance

Sharma, S. M., Singh, A., Dasgupta, S., & Kartikeyan, M. V. 

A review on the compact modeling of parasitic capacitance: 

from basic to advanced FETs. 

Journal of Computational Electronics

DOI: 10.1007/s10825-020-01515-4

Abstract: This paper presents a review on the development of parasitic-capacitance modeling for metal–oxide–semiconductor feldefect transistors (MOSFETs), covering models developed for the simple parallel-plate capacitance and the nonplanar and coplanar plate capacitances required for the intrinsic and extrinsic part of such devices. A comparative study of various extrinsic capacitance models with respect to a reference model is used to analyze the benefts of the various approaches. Capacitance models for basic MOSFETs and advance multigate FETs with two-dimensional (2D) and three-dimensional (3D) structures are reviewed. It is found that the elliptical feld lines between the gate electrodes and source/drain region are modeled very well, while deviations of ±2% in the orthogonal plate capacitance are observed when the gate electrode thickness is varied from 5 to 20nm.

Fig: The 3D structure of a FinFET

Acknowledgements: The authors would like to thank the Department of Electronics and Communication Engineering, IIT Roorkee, for their valuable support in carrying out this research work.

[paper] SPICE Model for Bipolar Resistive Switching Devices

Miranda, Enrique, and Jordi Suñé

Departament d’Enginyeria Electrònica,

UAB, 08193 Barcelona, Spain

Fundamentals and SPICE Implementation of the Dynamic Memdiode Model

for Bipolar Resistive Switching Devices

(2020 - techrxiv.org)

Abstract: This paper reports the fundamentals and SPICE  implementation of the dynamic memdiode model (DMM) for the  conduction characteristics of bipolar resistive switching (RS)  devices. Following Chua’s memristive devices theory, the  memdiode model comprises two equations, one for the electron  transport based on a heuristic extension of the quantum pointcontact model for filamentary conduction in dielectrics and a  second equation for the internal memory effect related to the  reversible displacement of atomic species within the oxide film.  The DMM represents a breakthrough with respect to the previous  quasi-static memdiode model (QMM) since it describes the  memory state of the device as a rate balance equation  incorporating both the snapback and snapforward effects,  features of utmost importance for the accurate and realistic  simulation of the RS phenomenon. The DMM allows simple setting  of the memory state initial condition as well as separate modeling  of the set and reset transitions. The model equations are  implemented in the LTSpice simulator using an equivalent  circuital approach with behavioral components and sources. The  practical details of the model implementation and its use are  thoroughly discussed.   

Fig: Hysteretic behavior of the filamentary-type I-V characteristic.

Filament stages: A) formation, high resistance state (HRS), B) completion, C) expansion,

D,F) complete expansion, low resistance state (LRS), G) dissolution, I) rupture.

Supplementary information: The memdiode model script for LTSpice XVII reported in this Appendix includes not only the DMM but also the QMM. It is important to activate one of the options at a time (DMM or QMM) by inserting asterisks (*) in the corresponding lines. The parameter list, I-V, and Auxiliary functions sections are common to both approaches. This does not mean that the obtained curves will be identical. The meaning of the parameters is discussed in the text and in previous papers.

LTSPICE script

.subckt memdiode + - H

*created by E.Miranda & J.Suñé, June 2020

.params

+ H0=0 ri=50

+ etas=50 vs=1.4

+ etar=100 vr=-0.4

+ imax=1E-2 amax=2 rsmax=10

+ imin=1E-7 amin=2 rsmin=10

+ vt=0.4 isb=200E-6 gam=1 gam0=0 ;isb=1/gam=0 no SB/SF

+ CH0=1E-3 RPP=1E10 I00=1E-10

*Dynamic model

BV A 0 V=if(V(+,-)>=0,1,0)

RH H A R=if(V(+,-)>=0,TS(V(C,-)),TR(V(C,-)))

CH H 0 1 ic={H0}

*Quasi-static model

*BH 0 H I=min(R(V(C,-)),max(S(V(C,-)),V(H))) Rpar=1

*CH H 0 {CH0} ic={H0}

*I-V

RE + C {ri}

RS C B R=RS(V(H))

BD B - I=I0(V(H))*sinh(A(V(H))*V(B,-))+I00

RB + - {RPP}

*Auxiliary functions

.func I0(x)=imin+(imax-imin)*limit(0,1,x)

.func A(x)=amin+(amax-amin)*limit(0,1,x)

.func RS(x)=rsmin+(rsmax-rsmin)*limit(0,1,x)

.func VSB(x)=if(x>isb,vt,vs)

.func ISF(x)=if(gam==0,1,pow(limit(0,1,x),gam)-gam0)

.func TS(x)=exp(-etas*(x-VSB(I(BD))))

.func TR(x)= exp(etar*ISF(V(H))*(x-vr))

.func S(x)=1/(1+exp(-etas*(x-VSB(I(BD)))))

.func R(x)=1/(1+exp(-etar*ISF(V(H))*(x-vr)))

.ends

Acknowledgements: This work was funded by the WAKeMeUP 783176 project, co‐ funded by grants from the Spanish Ministerio de Ciencia, Innovación y Universidades (PCI2018‐093107 grant) and the ECSEL EU Joint Undertaking and by project TEC2017-84321- C4-4-R funded by the Spanish Ministerio de Ciencia, Innovación y Universidades. Dr. G. Patterson and Dr. A. Rodriguez are greatly acknowledged for their contributions to the development of the ideas reported in this work

Webinar Series by Distinguished Experts

	The National Academy of Sciences, India (NASI) - Delhi Chapter- and
	MHRD-Institution Innovation Council (IIC) Deen Dayal Upadhyaya College Chapter (University of Delhi) Under the aegis of DBT Star College Program

Jointly Organizes

Webinar Series by Distinguished Experts

	June 25, 2020 @ 10 am Indian Standard Time Printed and Flexible Electronics and Devices Dr. Jin-Woo Han Research Scientist, Center for Nanotechnology, NASA Ames Research Center, Moffett Field, California, USA
	July 03, 2020 @ 04:30 pm Indian Standard Time New chemistry and physics in magnetic oxides Prof. J. Paul Attfield, FRS FRSE FRSC, Foreign Fellow INSA Professor of Materials Science at Extreme Conditions School of Chemistry, Centre for Science at Extreme Conditions, The University of Edinburgh, Edinburgh
	July 09, 2020 @ 06:30 pm Indian Standard Time Prof. Katepalli Sreenivasan, Foreign Fellow INSA Dean Emeritus of NYU Tandon School of Engineering; The Eugene Kleiner Professor for Innovation in Mechanical Engineering; Professor of Physics (Faculty of Arts and Science); Mathematics (Courant Institute of Mathematical Sciences)
	July 10, 2020 @ 01:30 India Standard Time Can Future Energy Needs be met Sustainably? Prof. Sir Chris Llewellyn Smith, FRS, FAPS (USA), Honorary Fellow, IOP (UK), Foreign Fellow INSA(India) Rudolf Peierls Centre for Theoretical Physics Parks Road, Oxford OX1 3PU
	July 11, 2020 @ 03:30 pm Indian Standard Time Are we there yet? How do cells find their way? Prof. Philip K. Maini, FRS, FIMA, FRSB, FMedSci, Foreign Fellow INSA (India) Wolfson Centre for Mathematical Biology Mathematical Institute, Andrew Wiles Building, Radcliffe Observatory Quarter Woodstock Road, Oxford
	July 14, 2020 @ 04:30 pm Indian Standard Time The influence of infection on Society before Covid19 Prof. Sir Peter Julius Lachmann, FRS, FRCP, FRCPath, FMedSci, Foreign Fellow INSA(India) Fellow, Emeritus Sheila Joan Smith Professor of Immunology Christ College, University of Cambridge

No registration fee to attend the Lecture. However, all interested should register via Google form on or before June 22, 2020 to attend the lectures via CISCO Webex/Google Meet. Link for Google form:

https://docs.google.com/forms/d/e/1FAIpQLSeMMpMi2ABiHoZ6p1SuntqnLkl-9k2E-dmmOXb5quFUkpDWuw/viewform

---

Organizer: Prof. Ajoy Ghatak, Chairperson - NASI Delhi Chapter & Prof. Anurag Sharma, Secretary - NASI Delhi Chapter

Coordinator:

Dr. Manoj Saxena, MNASc and Executive Committee Member-NASI Delhi Chapter

Associate Professor, Deptt. of Electronics, Deen Dayal Upadhyaya College, University of Delhi, New Delhi

Dr. Geetika Jain Saxena, Associate Professor, Department of Electronics, Maharaja Agrasen College, University of Delhi, New Delhi

Stay up to date with the latest developments in the MEMS areas with IEEE RightNow. Access for J-MEMS. Enjoy temporary Open Access to selected featured publications https://t.co/mxoRhbT802 #paper https://t.co/9h5EV2mEBf

Stay up to date with the latest developments in the MEMS areas with IEEE RightNow. Access for J-MEMS. Enjoy temporary Open Access to selected featured publicationshttps://t.co/mxoRhbT802#paper pic.twitter.com/9h5EV2mEBf

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June 23, 2020 at 11:56AM
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[paper] “Extrinsic” Compact Model of the MOSFET Drain Current

V. O. Turin, R. S. Shkarlat, G. I. Zebrev, B. Iñiguez and M. S. Shur

The “Extrinsic” Compact Model of the MOSFET Drain Current Based on a New Interpolation Expression for the Transition Between Linear and Saturation Regimes with a Monotonic Decrease of the Differential Conductance to a Nonzero Value

2020 4th IEEE EDTM, Penang, Malaysia

2020, pp. 1-4

doi: 10.1109/EDTM47692.2020.9117810

Abstract: Previously, we proposed a new interpolation expression to bridge the transition between the linear and the saturation regimes of “intrinsic” MOSFET. This approach, in contrast to the traditional one, gives a monotonic decrease of the differential conductance from the maximum value in the linear regime to the minimum value in the saturation regime. Later, we proposed a linear approximation for an “extrinsic” MOSFET drain current dependence on the “extrinsic” drain bias in the saturation regime for not very high drain bias when nonlinear effects can be neglected. To obtain this approximation, an equation for the output differential resistance of the “extrinsic” MOSFET in saturation regime was obtained, that is similar to the result known from the theory of the common source MOSFET amplifier with source degeneration. In this paper, we combine these two results and present an “extrinsic” compact model for a short-channel MOSFET above threshold drain current with proper account of the differential conductance in the saturation regime.