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Event Overview

2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - Call For Papers

2010 BIPOLAR/BiCMOS CIRCUITS AND TECHNOLOGY MEETING
Austin, Texas, USA
http://www.ieee-bctm.org
Short Course: Monday October 4, 2010, Conference: Tuesday and Wednesday October 5-6, 2010
Modeling Workshop: Thursday October 7, 2010

The Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) is a forum for technical communication focused on the needs and interests of the bipolar and BiCMOS community. Papers covering the design, performance, fabrication, testing and application of bipolar and BiCMOS integrated circuits, bipolar phenomena, and discrete bipolar devices are solicited. All papers must be suitable for a twenty-minute presentation. Text and figures must not have been presented at other conferences or published in any scientific or technical publications prior
to BCTM.
Publication in the BCTM 2010 Proceedings does not preclude publication in an IEEE journal, and authors are encouraged to do so. A Special Issue of the IEEE Journal of Solid-State Circuits will include selected papers from BCTM 2010.

Papers are solicited in the following areas:
- ANALOG / DIGITAL CIRCUIT DESIGN
- RADIO FREQUENCY CIRCUIT DESIGN
- WIRELINE COMMUNICATIONS: LAN, WAN, FDDI
- DEVICE PHYSICS
- MODELING / SIMULATION- PROCESS TECHNOLOGY

STUDENT PAPERS ARE ENCOURAGED
If you know of people who may have a paper to contribute please bring this Call
for Papers to their attention.

IMPORTANT DEADLINES FOR AUTHORS
Monday, May 3, 2010 Deadline for receipt of abstract and summary
Friday, June 11, 2010 Notification of acceptance to be sent by email
Friday, July 23, 2010 Final proceedings manuscript due

SUBMISSION AND CONTACT INFORMATION
Visit the conference website: www.ieee-bctm.org, or contact:
Jan Jopke, Conference Manager, CCS Associates, 6611 Countryside Drive, Eden
Prairie, MN 55346, USA
TEL: 1-952-934-5082, FAX: 1-952-934-6741 E-mail: ccsevents@comcast.net.

A paper in the Feb. issue of IEEE TED

A Physically Based Accurate Model for Quantum Mechanical Correction to the Surface Potential of Nanoscale MOSFETs Karim, M. A.   Haque, A.   Department of Electrical and Electronic Engineering, United International University, Dhaka; This paper appears in: Electron Devices, IEEE Transactions on Publication Date: Feb. 2010 Volume: 57,  Issue: 2 On page(s): 496-502 ISSN: 0018-9383 Digital Object Identifier: 10.1109/TED.2009.2037453 First Published: 2009-12-28 Current Version Published: 2010-01-19

Abstract We present a physically based explicit analytical model for the quantum mechanical (QM) correction to the surface potential of nanoscale metal–oxide–semiconductor (MOS) devices. The effect of wave function penetration into the gate dielectric is taken into account. Instead of using the band-gap widening approach, which indirectly includes QM correction, the proposed correction term is directly added to the semiclassical surface potential. Under accumulation bias, charges in extended states and quantized states contribute to the surface potential in different ways. The proposed QM correction considers this difference in contributions. Comparison with two existing analytical QM correction models and two self-consistent QM numerical models show that the proposed correction is more accurate than the existing analytical models. The improvement achieved under the accumulation bias is particularly significant. The gate $C$– $V$ characteristics of a number of different MOS devices have been simulated using the proposed correction. Excellent agreement with published experimental data has been observed.

Analog FastSpice RF delivers noise analysis for RF circuits

By Rick Nelson, Editor-in-Chief -- EDN, 12/22/2009

Berkeley Design Automation Inc has announced AFS RF (Analog FastSpice radio frequency), which Chief Operating Officer Paul Estrada calls the industry’s first true Spice-accurate noise-analysis tool for RF circuits. AFS RF accurately analyzes nanometer-scale device noise impact for all types of prelayout and postlayout circuits, ensuring early insight into its impact on performance, power, and area.
 Before the emergence of AFS RF, designers had to use limited-spectrum RF tools that can only approximate device noise impact on RF circuits, Estrada explains. Such approximations are increasingly inaccurate with decreasing process geometries, often becoming grossly inaccurate in nanometer-scale circuits. Circuits with sharp transitions, such as switched-capacitor filters, charge pumps, and dividers; high-frequency circuits, such as RF front-end blocks; and oscillators are especially sensitive to these inaccuracies. Without accurate analysis, designers must include expensive design margin or risk missing specifications in silicon.
 Using the industry’s first full-spectrum device-noise-analysis engine, Analog FastSpice RF provides true Spice accuracy for every run. For complex circuits, it is five to 10 times faster than traditional RF tools that can only approximate device-noise effects. AFS RF features the DNA (device noise-analysis) Advisor to characterize DNA requirements, high-capacity periodic-steady-state analysis for greater than 100,000-element postlayout circuits, full-spectrum periodic-noise analysis with true Spice accuracy, full-spectrum total oscillator-device-noise analysis capability with phase and amplitude noise, and harmonic balance for fast single-tone analysis of moderately nonlinear circuits.


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EAMTA 2010 / CAMTA - CUMTA 2010

EAMTA 2010 [www.eamta.com.ar]
The fifth School of Micro and Nanoelectronics will take place from October 1 - 9, 2010, in the facilities of Instituto de Ingeniería Eléctrica of Universidad de la República del Uruguay and Departamento de Ingeniería Eléctrica Universidad Católica del Uruguay.

CAMTA - CUMTA 2010 [www.eamta.com.ar]
The Conference section of the School will take place on Thursday October 7 and Friday October 8, 2010. All papers will be presented in poster format, to stimulate discussion and feedback. Tutorials will be in charge of distinguished lecturers.

Contact Information: For the 2010 edition of EAMTA, Dr. Fernando Silveira and Dr. Alfredo Arnaud will be the General Chairs: [eamta.ar (at) gmail.com]

ISSCC 2010 Preview: Assessing '05 predictions

A couple of safe ISSCC'05 bets reviewd by Don Scansen. Have ISSCC organizers learned something by looking back?

Agilent Technologies Announces YouTube Channel for Agilent EEsof EDA

Agilent Technologies Inc. has announced the launch of the Agilent EEsof EDA channel on YouTube. The channel features more than 100 informational videos with subtitles in 50 different languages. The videos offer detailed application information on the Advanced Design System, Genesys, SystemVue, and other electronic design automation software from Agilent EEsof. The channel is designed to provide tutorial information to Agilent’s large installed base of users, or to anyone wanting to learn more about Agilent EEsof’s design software and high-frequency design applications. [more]