Tentative Technical Program Schedule of the Webinar Series

The Tentative Technical Program Schedule of the Webinar Series 

jointly organized by 

The National Academy of Sciences India - Delhi Chapter 

and Science Foundation & MoE-IIC-DDUC Chapter,

Deen Dayal Upadhyaya College (University of Delhi) 

under the aegis of DBT Star College Program

Kindly see the attachment: for attending one or more Webinars, you are requested to register yourself with the ZOOM Webinar Link https://us02web.zoom.us/webinar/register/WN_iXRnhVc9SxWrSOD9CWTITA and also join the TELEGRAM group (https://t.me/joinchat/UEnJfvW8kcHf_Jmo) for receiving all updates about the Webinar Series. The Exact title of the Talks (which are missing as of now) and the time shall be shared by January 25, 2021 in the telegram group.

Kindly forward this message and attachment to your students and colleagues so that they can also register and join the telegram group.

• E-Certificate will be provided like earlier programs.
• Zoom Platform will be used for conducting Online Programs

Coordinator:

Dr. Manoj Saxena | डॉ मनोज  सक्सेना 

Program Coordinator - MoE IIC DDUC Chapter

Associate Professor | सह - आचार्य

Department of Electronics | इलेक्ट्रॉनिक्स विभाग

Deen Dayal Upadhyaya College | दीन दयाल उपाध्याय कॉलेज

University of Delhi | दिल्ली विश्वविद्यालय

Dwarka Sector-3, New Delhi-110078 | द्वारका क्षेत्र -३, नई दिल्ली -११००७८

India | भारत

What Might the “#1nm #Node” Look Like? by Tom Dillinger; Semiwiki https://t.co/aP6kX33h0W #semi https://t.co/noo3g0hMSZ

What Might the “#1nm #Node” Look Like? by Tom Dillinger; Semiwiki https://t.co/aP6kX33h0W #semi pic.twitter.com/noo3g0hMSZ

— Wladek Grabinski (@wladek60) January 4, 2021

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from Twitter https://twitter.com/wladek60

January 04, 2021 at 11:31AM
via IFTTT

Happy New 2021 Year

[paper] IGBT Compact Modeling

Compact Modeling of IGBT Charging/Discharging for Accurate Switching Prediction

Y. Miyaoku¹, A. Tone¹, K. Matsuura¹, M. Miura-Mattausch¹ (Fellow, IEEE),

H. J. Mattausch¹ (Senior Member, IEEE), and D. Ikoma²

IEEE J-EDS, vol. 8, pp. 1373-1380, 2020

doi: 10.1109/JEDS.2020.3008919

1 Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashi-Hiroshima 739-8527, Japan
2 Sensor and Semiconductor Development, Denso Corporation, Aichi 448-8661, Japan

ABSTRACT The trench-type IGBT is one of the major devices developed for very high-voltage applications, and has been widely used for the motor control of EVs as well as for power-supply systems. In the reported investigation, the accurate prediction of the power dissipation of IGBT circuits has been analyzed. The main focus is given on the carrier dynamics within the IGBTs during the switching-off phase. It is demonstrated that discharging and charging at the IGBT’s gate-bottom-overlap region, where electron discharging is followed by hole charging, has an important influence on the switching performance. In particular, the comparison of long-base and short-base IGBTs reveals, that a quicker formation of the neutral region within the resistive base region, as occurring in the long-base IGBT, leads to lower gatebottom-overlap capacitance, thus realizing faster electron discharging and hole charging of this overlap region.

FIG: IGBT structures with nMOSFET + pnp BJT part (a. and b.) and nMOSFET-only structure (c.). The X–Y line is through the middle of the bottom-gate oxide and the A–B line is directly underneath the bottom-gate oxide.

Received 14 May 2020; revised 2 July 2020; accepted 8 July 2020. Date of publication 13 July 2020; date of current version 8 December 2020. The review of this article was arranged by Editor M. Mierzwinski. Digital Object Identifier 10.1109/JEDS.2020.3008919

[paper] Coplanar OTFT

Blurred Electrode for Low Contact Resistance in Coplanar Organic Transistors

Xiaolin Ye, Xiaoli Zhao, Shuya Wang, Zhan Wei, Guangshuang Lv, Yahan Yang, Yanhong Tong, Qingxin Tang, and Yichun Liu

American Chemical Society; Nano; Dec.18, 2020

DOI: 10.1021/acsnano.0c08122

*Center for Advanced Optoelectronic Functional Materials Research, and Key Lab of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 5268 Renmin Street, Changchun 130024, China

Abstract: Inefficient charge injection and transport across the electrode/semiconductor contact edge severely limits the device performance of coplanar organic thin-film transistors (OTFTs). To date, various approaches have been implemented to address the adverse contact problems of coplanar OTFTs. However, these approaches mainly focused on reducing the injection resistance and failed to effectively lower the access resistance. Here, we demonstrate a facile strategy by utilizing the blurring effect during the deposition of metal electrodes, to significantly reduce the access resistance. We find that the transition region formed by the blurring behavior can continuously tune the molecular packing and thin-film growth of organic semiconductors across the contact edge, as well as provide continuously distributed gap states for carrier tunnelling. Based on this versatile strategy, the fabricated dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT) coplanar OTFT shows a high field-effect mobility of 6.08 cm2 V–1 s–1 and a low contact resistance of 2.32 kΩ cm, comparable to the staggered OTFTs fabricated simultaneously. Our work addresses the crucial impediments for further reducing the contact resistance in coplanar OTFTs, which represents a significant step of contact injection engineering in organic devices.

Fig: Coplanar Organic Transistors (oTFTs)