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Jan 21, 2021

#GaN based #MEMS resonator operates stably at high temperature https://t.co/5qKtiUn6q3 #semi https://t.co/mhajQde4EQ

#GaN based #MEMS resonator operates stably at high temperature https://t.co/5qKtiUn6q3 #semi pic.twitter.com/mhajQde4EQ
— Wladek Grabinski (@wladek60) January 21, 2021

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January 21, 2021 at 02:45PM
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Jan 20, 2021

[paper] Publish or be ethical?

Mariola Paruzel-Czachura, Lidia Baran, Zbigniew Spendel

Publish or be ethical? Publishing pressure and scientific misconduct in research

First Published CC BY-NC 4.0 Dec. 18, 2020

SAGE Journals: Research Ethics (2020)

DOI: 10.1177/1747016120980562

* Institute of Psychology, University of Silesia in Katowice, Poland

Abstract: The paper reports two studies exploring the relationship between scholars’ self-reported publication pressure and their self-reported scientific misconduct in research. In Study 1 the participants (N = 423) were scholars representing various disciplines from one big university in Poland. In Study 2 the participants (N = 31) were exclusively members of the management, such as dean, director, etc. from the same university. In Study 1 the most common reported form of scientific misconduct was honorary authorship. The majority of researchers (71%) reported that they had not violated ethical standards in the past; 3% admitted to scientific misconduct; 51% reported being were aware of colleagues’ scientific misconduct. A small positive correlation between perceived publication pressure and intention to engage in scientific misconduct in the future was found. In Study 2 more than half of the management (52%) reported being aware of researchers’ dishonest practices, the most frequent one of these being honorary authorship. As many as 71% of the participants report observing publication pressure in their subordinates. The primary conclusions are: (1) most scholars are convinced of their morality and predict that they will behave morally in the future; (2) scientific misconduct, particularly minor offenses such as honorary authorship, is frequently observed both by researchers (particularly in their colleagues) and by their managers; (3) researchers experiencing publication pressure report a willingness to engage in scientific misconduct in the future.

Fig: Ways in which respondents have infringed ethical principles

Founding: The current research was supported by Miniatura1 2017/01/X/HS6/01332 from the National Science Centre (NCN, Poland) to Mariola Paruzel-Czachura. Any opinions, findings, and conclusions or recommendations expressed in this material are those of them authors and do not necessarily reflect the views of the National Science Center. The funders had no role in study design, data collection and analysis, decision to publish, or preparation of the manuscript.

Tracking a variety of #semi, which are affected by COVID-19. (Image source: Yole) https://t.co/oeNFCdXZTj https://t.co/8wV4D8PQR3

Tracking a variety of #semi, which are affected by COVID-19

(Image source: Yole) https://t.co/oeNFCdXZTj pic.twitter.com/8wV4D8PQR3

from Twitter https://twitter.com/wladek60

January 20, 2021 at 10:58AM
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Jan 19, 2021

[paper] CNTFET Technology for RF Applications

Martin Hartmann^1,2, Sascha Hermann^1,2,3, Phil F. Marsh⁴, Christopher Rutherglen⁴,

Dawei Wang⁵, Li Ding⁶, Lian-Mao Peng⁶, Martin Claus⁷,

and Michael Schröter⁷ (Senior Member, IEEE)

CNTFET Technology for RF Applications:

Review and Future Perspective

(Invited Paper)

IEEE Journal of Microwaves, vol. 1, no. 1, pp. 275-287, 2021

DOI: 10.1109/JMW.2020.3033781

¹Center for Microtechnology, Chemnitz University of Technology, Chemnitz, Germany
²Center for Advancing Electronics Dresden, Germany
³Fraunhofer Institute for Electronic Nanosystems, Chemnitz, Germany
⁴Carbonics Inc., Culver City, USA
⁵Carbon Technology Inc., Irvine, USA
⁶Key Laboratory for the Physics and Chemistry of Nanodevices

and Center for Carbon-based Electronics, Peking University, China
⁷Chair for Electron Devices and Integrated Circuits, Technical University Dresden, Germany

Abstract: RF CNTFETs are one of the most promising devices for surpassing incumbent RF-CMOS technology in the near future. Experimental proof of concept that outperformed Si CMOS at the 130 nm technology has already been achieved with a vast potential for improvements. This review compiles and compares the different CNT integration technologies, the achieved RF results as well as demonstrated RF circuits. Moreover, it suggests approaches to enhance the RF performance of CNTFETs further to allow more profound CNTFET based systems e.g., on flexible substrates, highly dense 3D stacks, heterogeneously combined with incumbent technologies or an all-CNT system on a chip.

Fig: (a) sketch of a T-shape top gate on 4" wafer and (b) corresponding SEM image,

Acknowledgement: This work was supported in part by the German Research Foundation (DFG) through the Cluster of Excellence “Center for Advancing Electronics Dresden” (EXC1056/1); in part by the Federal Ministry of Education and Research under the project reference numbers 16FMD01K, 16FMD02 and 16FMD03, under the individual DFG Grant SCR695/6%25; in part by the National Key Research & Development Program under Grant 2016YFA0201901; in part by the National Science Foundation of China under Grants 61888102 and 61671020; in part by the Beijing Municipal Science and Technology Commission under Grant Z181100004418011; in part by the King Abdulaziz City for Science and Technology (KACST); in part by the The Saudi Technology Development and Investment Company (TAQNIA); in part by the U.S. Army STTR Contract W911NF19P002; and in part by the SBIR programs from the U.S. National Science Foundation and the U.S. Air Force Research Laboratory.

Jan 18, 2021

Von Neumann Is Struggling https://t.co/CQZ9RSnUNx #semi https://t.co/fbpB7K9TFw

Von Neumann Is Struggling https://t.co/CQZ9RSnUNx #semi pic.twitter.com/fbpB7K9TFw
— Wladek Grabinski (@wladek60) January 18, 2021

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January 18, 2021 at 09:47AM
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