Creating #Silicon #Valley 2.0 #SV2.0 [IEEE Spectrum] https://t.co/RAqZp75pGL) #semi pic.twitter.com/4LGbgFCjMd
— Wladek Grabinski (@wladek60) January 12, 2021
from Twitter https://twitter.com/wladek60
January 12, 2021 at 04:52PM
via IFTTT
Jan 12, 2021
Creating #Silicon #Valley 2.0 #SV2.0 [IEEE Spectrum] https://t.co/RAqZp75pGL) #semi https://t.co/4LGbgFCjMd
from Twitter https://twitter.com/wladek60
January 12, 2021 at 04:52PM
via IFTTT
[paper] Modeling Power GaN-HEMTs in SPICE
Utkarsh Jadli, Faisal Mohd-Yasin, Hamid Amini Moghadam, Peyush Pande*, Mayank Chaturvedi and Sima Dimitrijev
Modeling Power GaN-HEMTs Using Standard MOSFET Equations and Parameters in SPICE
Electronics 2021, 10, 130
DOI: 10.3390/electronics10020130
Queensland Micro- and Nanotechnology Centre, Griffith University, Brisbane, QLD 4111, Australia;
*Electronics Department, Graphic Era (Deemed to Be University), Dehradun, Uttarakhand 248002, India;
Abstract: The device library in the standard circuit simulator (SPICE) lacks a gallium nitride based high-electron-mobility-transistor (GaN-HEMT) model, required for the design and verification of power-electronic circuits. This paper shows that GaN-HEMTs can be modeled by selected equations from the standard MOSFET LEVEL3 model in SPICE. A method is proposed for the extraction of SPICE parameters in these equations. The selected equations and the proposed parameter-extraction method are verified with measured static and dynamic characteristics of commercial GaN-HEMTs. Furthermore, a double pulse test is performed in LTSpice and compared to its manufacturer model to demonstrate the effectiveness of the MOSFET LEVEL3 model. The advantage of the proposed approach to use the MOSFET LEVEL3 model, in comparison to the alternative behavioral-based model provided by some manufacturers, is that users can apply the proposed method to adjust the parameters of the MOSFET LEVEL3 model for the case of manufacturers who do not provide SPICE models for their HEMTs.
Fig: Internal cross-sectional structure of GaN-HEMT
Acknowledgments: The authors would like to acknowledge the Innovative Manufacturing Co- operative Research Centre (IMCRC) for providing a PhD scholarship to the first author. We also acknowledge the School of Engineering and Built Environments (EBE) of Griffith University for funding this project. This work was performed in part at the Queensland node of the Australian National Fabrication Facility, a company established under the National Collaborative Research Infrastructure Strategy to provide nano- and micro-fabrication facilities for Australia’s researchers.
Jan 11, 2021
[paper] Stretchable transistors
Yahao Dai, Huawei Hu, Maritha Wang, Jie Xu* and Sihong Wang
Stretchable transistors and functional circuits for human-integrated electronics
Nat Electron (2021)
DOI:10.1038/s41928-020-00513-5
Pritzker School of Molecular Engineering, The University of Chicago, Chicago, IL, USA
*Nanotechnology and Science Division, Argonne National Laboratory, Lemont, IL, USA
Abstract: Electronics with skin- or tissue-like mechanical properties, including low stiffness and high stretchability, can be used to create intelligent technologies for application in areas such as health monitoring and human–machine interactions. Stretchable transistors that provide signal-processing and computational functions will be central to the development of this technology. Here, we review the development of stretchable transistors and functional circuits, examining progress in terms of materials and device engineering. We consider the three established approaches for creating stretchable transistors: buckling engineering, stiffness engineering and intrinsic-stretchability engineering. We also explore the current capabilities of stretchable transistors and circuits in human-integrated electronics and consider the challenges involved in delivering advanced applications.
Fig: Stretchable sensor–amplifier system for pulse measurements [Nature 555]
Acknowledgements: This work is supported by the start-up fund from the University of Chicago. J.X. acknowledges support from the Center for Nanoscale Materials, a US Department of Energy Office of Science User Facility, and the US Department of Energy, Office of Science, under contract no. DE-AC02-06CH11357.
REF:
[Nature 555] Wang, S. et al. Skin electronics from scalable fabrication of an intrinsically stretchable transistor array. Nature 555, 83–88 (2018).
The #Top50 Most Valuable Global Brands https://t.co/6pkHadVcJ4 #semi https://t.co/vtZiOE5DL7
The #Top50 Most Valuable Global Brands https://t.co/6pkHadVcJ4 #semi pic.twitter.com/vtZiOE5DL7
— Wladek Grabinski (@wladek60) January 11, 2021
from Twitter https://twitter.com/wladek60
January 11, 2021 at 08:59PM
via IFTTT
[Technical Paper] Shunsuke Abe et al. ;Photonic integration based on a ferroelectric thin-film platform; Advantest Laboratories, Ltd. https://t.co/463lP5jlAi #semi https://t.co/d6jWVypZBA
[Technical Paper] Shunsuke Abe et al. ;Photonic integration based on a ferroelectric thin-film platform; Advantest Laboratories, Ltd. https://t.co/463lP5jlAi #semi pic.twitter.com/d6jWVypZBA
— Wladek Grabinski (@wladek60) January 11, 2021
from Twitter https://twitter.com/wladek60
January 11, 2021 at 03:33PM
via IFTTT
Subscribe to:
Posts (Atom)