Wide-Range Prediction of Ultra-High Voltage SiC IGBT Static Performance
Using Calibrated TCAD Model
Daniel Johannesson1,2, Keijo Jacobs1, Staffan Norrga1, Anders Hallén3,
Muhammad Nawaz2 and Hans-Peter Nee1,2
Materials Science Forum Submitted: 2019-09-19
ISSN: 1662-9752, Vol. 1004, pp 911-916
DOI:10.4028/www.scientific.net/MSF.1004.911
Division of Electric Power and Energy Systems, KTH , Sweden
2ABB Corporate Research, Västerås, Sweden
3Division of Electronics, KTH, Sweden
Abstract: In this paper, a technology computer-aided design (TCAD) model of a silicon carbide (SiC) insulated-gate bipolar transistor (IGBT) has been calibrated against previously reported experimental data. The calibrated TCAD model has been used to predict the static performance of theoretical SiC IGBTs with ultra-high blocking voltage capabilities in the range of 20-50 kV. The simulation results of transfer characteristics, IC-VGE, forward characteristics, IC-VCE, and blocking voltage characteristics are studied. The threshold voltage is approximately 5 V, and the forward voltage drop is ranging from VF = 4.2-10.0 V at IC = 20 A, using a charge carrier lifetime of τA = 20 μs. Furthermore, the forward voltage drop impact for different process dependent parameters (i.e., carrier lifetimes, mobility/scattering and trap related defects) and junction temperature are investigated in a parametric sensitivity analysis. The wide-range simulation results may be used as an input to facilitate high power converter design and evaluation. In this case, the TCAD simulated static characteristics of SiC IGBTs is compared to silicon (Si) IGBTs in a modular multilevel converter in a general highpower application. The results indicate several benefits and lower conduction energy losses using ultra-high voltage SiC IGBTs compared to Si IGBTs.
Fig: 4H-SiC IGBT structure implemented in 2D TCAD simulator
Acknowledgment This work was funded through SweGRIDS, by the Swedish Energy Agency and ABB.
