Jun 11, 2016

Modeling and simulation of nanomagnetic logic with cadence virtuoso using Verilog-A https://t.co/J8R9fcdtDu #papers #feedly


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June 11, 2016 at 01:22PM
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Jun 8, 2016

Improved modeling of GaN HEMTs for predicting thermal and trapping-induced-kink effects https://t.co/YanqSVXH3q #papers #feedly


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June 08, 2016 at 01:44PM
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Jun 6, 2016

A novel approach for the modeling of HEMT high power device https://t.co/rDLgFItU1g #papers #feedly


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June 06, 2016 at 06:38PM
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Jun 2, 2016

A new constituent of electrostatic energy in semiconductors

 A new constituent of electrostatic energy in semiconductors
 An attempt to reformulate electrostatic energy in matter
 
 Swiss Federal Institute of Technology Lausanne Switzerland 

Received: 30 October 2015
Received in final form: 29 January 2016
Published online: 1 June 2016

Eur. Phys. J. B, 89 6 () 136
DOI: http://dx.doi.org/10.1140/epjb/e2016-60865-4

Abstract: The concept of electric energy is revisited in detail for semiconductors. We come to the conclusion that the main relationship used to calculate the energy related to the penetration of the electric field in semiconductors is missing a fundamental term. For instance, spatial derivate of the electrostatic energy using the traditional formula fails at giving the correct electrostatic force between semiconductor based capacitor plates, and reveals unambiguously the existence of an extra contribution to the standard electrostatic free energy. The additional term is found to be related to the generation of space charge regions which are predicted when combining electrostatics with semiconductor physics laws, such as for accumulation and inversion layers. On the contrary, no such energy is needed when relying on electrostatics only, as for instance when adopting the so-called full depletion approximation. The same holds for neutral and charged insulators that are still consistent with the customary definition, but these two examples are in fact singular cases. In semiconductors for instance, this additional energy can largely exceed the energy gained by the dipoles, thus becoming the dominant term. This unexpected result clearly asks for a generalization of electrostatic energy in matter in order to reconcile basic concepts of electrostatic energy in the framework of classical physics.

Keywords: Solid State and Materials

© The Author(s) 2016. This article is published with open access at Springerlink.com

May 27, 2016

Workshop on Flexible Electronics

The Workshop on Flexible Electronics (WFE) will be held on June 29 2016 in Tarragona (Catalonia, Spain) in combination with the 4th Training Course on Compact Modeling (TCCM, June 27-28).

The Workshop on Flexible Electronics (WFE) will provide a forum for discussions and current trends and practices on Flexible Electronics, including materials, technology, device characterization, device modeling and circuit design.  The WFE workshop is organized by the Department of Electronic, Electrical and Automatic Control Engineering (DEEEiA) of the Universitat Rovira i Virgili (URV), in Tarragona and the Fundació Universitat Rovira i Virgili (FURV), and is co-sponsored by the EU-funded DOMINO projecct and the Spanish Thematic Network REFLEXIO.  

The General Chair of WFE is Prof. Benjamin IƱiguez, who is also the Coordinator of the DOMINO project.

 A partial list of the areas of interest includes:
  • Organic and Flexible Photovoltaic device technologies
  • Organic and Flexible LED technologies
  • TFT technologies for Flexible and Printed Electronics
  • Interconnects in Flexible Electronics
  • Physics, characterization and modeling of devices for Flexible Electronics
  • Circuit design for Flexible and Printed Electronics
The deadline for a 500 word abstract submission is May 29 2016.

Attendees to TCCM who work on Flexible Electronics (not necessarily modeling) will have a chance to present recent results on their own. But WFE is open to all researchers.

Besides, attending TCCM can be of interest to potential WFE participants, since several TCCM lectures target modeling issues of devices for Flexible Electronics (in particular, Thin-Film Transistors), or modeling aspects that can be applied to many semiconductor devices.

Registration to both events is open. It is possible to register only to WFE, or only to TCCM or to both. It is quite cheap, in partular for students, and includes lunches, coffee breaks, and in the case of TCCM, a gala dinner.

Finally, on June 30-July 1 the Annual Graduate Student Meeting on Electronic Engineering will be held, consisting of plenary talks by prestigious researchers and student presentations. Registration is free.

Tarragona is about 100 Km south from Barcelona, on the coast (the so-called "Costa Daurada", Golden Coast). Traveling to Tarragona from Barcelona is easier. There are frequent direct buses between Tarragona and Barcelona Airport, and also frequent trains between Tarragona and Barcelona. Besides, from some European cities it is possible to fly to Reus Airport, which is about 10 Km from Tarragona.

Tarragona is one of the most  important hubs of tourism in Europe, not only because of the nice beaches around the city, but also because of its historical landmarks.. Tarragona was a very important city of the Roman Empire. In 2000 UNESCO committee officially declared the Roman archaeological complex of Tarraco (name of Tarragona during the Roman Empire) a World Heritage Site. This recognition is intended to help ensure the conservation of the monuments, as well as to introduce them to the broader international public.

I encourage researchers on  Flexible Electronics to send abstracts to  WFE!