The 2nd Training Course on Compact Modeling (TCCM) will be held in Tarragona (Catalonia, Spain) on June 28-29 2012.
It will be organized by the NEPHOS Group, of the Department of Electronic, Electrical and Automatic Control Engineering at the Universitat Rovira i Virgili (Tarragona)..
The General Chairman is myself, Prof. Benjamin Iñiguez.
The Training Course on Compact Modeling will consist of l2 lectures addressing relevant topics in the compact modeling of advanced electron devices. These lectures will be conducted by top experts in the field. Most of the lectures will target compact modeling issues applicable to many electron devices. In particular, emphasis will be given on MOSFETs (bulk, SOI, Multi-Gate and High Voltage MOS structures) and HEMTs.
Attendees will get very useful information on the different aspects of advenced device modelling. This training course is therefore recommended to Master and Ph D students, as well as postdocs and early stage researchers in companies, and not necessarily doing research on modelling.
Here is the final programme of the Training Course on Compact Modeling
It will be organized by the NEPHOS Group, of the Department of Electronic, Electrical and Automatic Control Engineering at the Universitat Rovira i Virgili (Tarragona)..
The General Chairman is myself, Prof. Benjamin Iñiguez.
The Training Course on Compact Modeling will consist of l2 lectures addressing relevant topics in the compact modeling of advanced electron devices. These lectures will be conducted by top experts in the field. Most of the lectures will target compact modeling issues applicable to many electron devices. In particular, emphasis will be given on MOSFETs (bulk, SOI, Multi-Gate and High Voltage MOS structures) and HEMTs.
Attendees will get very useful information on the different aspects of advenced device modelling. This training course is therefore recommended to Master and Ph D students, as well as postdocs and early stage researchers in companies, and not necessarily doing research on modelling.
Here is the final programme of the Training Course on Compact Modeling
8:30 Training
Courses Opening Session
Benjamin Iniguez (Universitat Rovira i Virgili, Tarragona, Spain)
8:55 "Tunnel and quasi-ballistic transport modelling in
nanoscale MOS devices".
Raphaël Clerc (Institut
National Polytechnique de Grenoble, France)
11:15 Coffee break
11:40 "3D analytical modelling techniques for Tri-Gate MOS
structures"
Romain Ritzenthaler
(IMEC, Belgium)
12:50 "S-parameter and nonlinear RF modelling"
Franz Sischka (Agilent Technologies, Böblingen, Germany)
14:00 Lunch
15:15 "Low frequency noise modeling"
Frédéric Martinez (Université de Montpellier 2, France)
16:25 Quantum
confinement models for nanoelectronic devices
David Jiménez
(Universitat Autònoma de Barcelona, Spain)
20:30 Gala dinner
June 29 2012
8:45 "Thermal modelling of RF and microwave devices"
Giovanni Ghione (Politecnico di Torino, Italy)
9:55 "Statistical modelling techniques"
Colin C. McAndrew (Freescale Semiconductors, Phoenix,
AZ, USA)
11:05 Coffee break
11:30 High
frequency noise modeling
Jamal Deen (McMaster University,
Canada)
12:50 "QucsStudio: A second generation Qucs software package
for compact semiconductor device model development based on interactive and
compiled equation-defined modelling techniques plus circuit simulation"
Mike Brinson (Metropolitan University of London, UK)
14:00 Lunch
15:15 "Flicker noise measurements and characterization"
Thomas Gneiting (AdMOS GmbH, Frickenhausen, Germany)
16:25 "World-wide Model Standardization at the CMC, and DRAM
Modeling Needs"
Peter Lee (vice-chair of the Compact Modeling Council, Elpida Memory, Japan)
http://compactmodelling.eu/ The Training Course on Compact Modeling is an event sponsored by the FP7 “COMON” (COmpact MOdelling Network) IAPP Project (which is coordinated by the Universitat Rovira i Virgili) in collaboration with the IEEE EDS Compact Modeling Technical Committee.
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