Thursday, 5 April 2012

4th Regional Seminar "Computer simulation and design of micro- nano- and microelectromechanical systems"

Natural Sciences Faculty FSEIHPE "State University - teaching, research and production complex"
Physics Department
Teaching and research laboratory instrument-technological modeling of micro-and nano-electronics 

March 30, 2012, Orel, Naugorskoe Av. 29

Seminar Program [translated by Google

  1. S. Matyukhin 1, Welcome to the participants
    1 State University-UNPK
  2. A VO Turin, 2 Zebra G.I.2 3 Dorofeev, AA, Device-technological simulation of self-heating in GaN HEMT ,
    1-UNPK State University,
    2 NRNU "MiFi"
    3 3FGUP NPP "Pulsar"
  3. A VO Turin, 2 Zebra GI, 3 Inigez B3, 4, Shur MS, Correct account of non-zero differential conductivity in a compact model of MOSFET in saturation due to self-heating effect and because korotkokanalnyh effects ,
    1-UNPK State University,
    2 NRNU "MiFi"
    3 University of Rovira and Virginia, Spain,
    4 Rensselaerovsky Polytechnic Institute, USA
  4. Garanovich D. Drozdov, DG, EM Savchenko Design devices from electrostatic discharge protection for bipolar integrated circuits ,
    FSUE NPP "Pulsar"
  5. Drozdov, DG, EM Savchenko, Siomko VO Study of models for the calculation of heterostructure transistors based on AlGaN / GaN
    FSUE NPP "Pulsar"
  6. Siomko VO, Drozdov, DG, EM Savchenko, Research methods for calculating the breakdown voltage of transistors based on heterostructures AlGaN / GaN
    FSUE NPP "Pulsar"
  7. A Kozil Z., S. Birner 2, 3 Dupuis, AR, Nextnano: device-technological modeling of transport in quantum well semiconductor lasers with a double restriction
    1-UNPK State University,
    2 Walter Schottky Institut, Technische Universität Munchen, Germany,
    3 Matco Industries Inc., Scarborough, Ontario, Canada
  8. Kozil Z., Differential resistance characteristics of the current-voltage characteristics of semiconductor lasers with a double restriction and optical efficiency
    State University-UNPK
  9. Titushkin DA, Matyukhin SI, Modeling of electron-optical system, light-emitting diodes in the package Sentaurus TCAD software company Synopsys ,
    State University-UNPK
  10. Makulevsky GR, Malyj DO, Matyukhin S., Investigation of the dependence of characteristics of RO DHS laser waveguide structure by taking into account the thermal effects ,
    State University-UNPK
  11. Malyj DO, Makulevsky G.R, Matyukhin SI, Effect of heat on the electrical and optical characteristics of semiconductor lasers, DHS PO using the instrument-technological methods of modeling
    State University-UNPK
  12. Tsyrlov AM, Cherkasov, MA, Technical requirements for analysis tools and simulation of high-power devices, switching equipment ,
    JSC «Proton»
  13. Chernyshov, KN, Matyukhin S., Computer simulation of the diffusion technology of IGBT ,
    State University-UNPK
  14. 1.2 AA Pisarev, a Matyukhin SI, 2 Stavtsev AV Computer simulation of the thyristor
    1-UNPK State University,
    2 ZAO "Proton-Electrotex"
  15. A Stoudennikov AS, a Turin VO 2 Tsyrlov AM, Compact modeling of silicon vertical MOSFET with double diffusion in the program Quite Universal Circuit Simulator
    1-UNPK State University,
    2 of "Proton"
  16. 1 Turin, VO, VV Ivanov 1, 2 Tsyrlov AM, 3 Martemyanov IS, Simulation of a silicon vertical MOSFET with double diffusion in the program Synopsys TCAD ,
    1-UNPK State University,
    2 of "Proton"
    3 ETU "LETI" 

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