May 17, 2011

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, MAY 2011

A physically based, accurate compact model of direct tunneling gate current considering quantum mechanical effects in nanoscale metal-oxide-semiconductor field-effect transistors

  1. M. A. Karim1,2,*,
  2. Q. D. M. Khosru1
Article first published online: 12 MAY 2011
DOI: 10.1002/jnm.817
Cover image for Vol. 24 Issue 3

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields

Early View (Online Version of Record published before inclusion in an issue)

May 12, 2011

Open Ph D scholarship in semiconductor device modeling

We offer one scholarship for a Ph D student position in the Department of Electronic Engineering in the Universitat Rovira i Virgili (URV), in Tarragona, Spain.


The duration of the grant will be for four years. The monthly salary will be about 1000 Euro/month. The position will start in September 2011.

The candidate should have a Bachelor or Master degree in Electrical Engineering, Electronic Engineering, Telecommunication Engineering or Physics. A good background in Semiconductor Physics, Semiconductor Devices, or Integrated Circuit Design will be highly appreciated.

The work to be done by the candidate will be focused on the development of new techniques of characterization and modeling of novel advanced semiconductor devices, in particular nanoscale MOSFETs. It will be related to several European projects in which the hosting group participates, in particular the COmpact MOdelling Netwok (COMON), that is led by the hosting group (the so-called NEPHOS group) and the SQWIRE (Silicon Quantum WIREs) project, about junctionless nanowires.

The NEPHOS group at URV is one of the most powerful teams in Europe in the area of compact modeling of semiconductor devices.


Required documents for applicants


Applicants are required to send to the address specified below the following documents (in English or Spanish):

1) a full Curriculum Vitae (as complete as possible) with passport number

2) Copy of their diploma

3) copy of their passport

4) Academic certificate including their marks (it is important that the number of hours or credits of each subject appears). It is also very important that the document specifies what is the minimum mark for passing a given subject and what is the maximum mark that can be awarded.

Candidates are requested to send their documents by e-mail to:

Prof. Benjamin Iñiguez
Department of Electronic, Electrical and Automatic Control Engineering

Universitat Rovira i Virgili (URV)

Avinguda Països Catalans, 26
43007
Tarragona (Spain)
Email: benjamin.iniguez@gmail.com
Tel: +34977558521 Fax:+34977559610


Deadline: May 31 2011

You can contact Prof. Benjamin Iñiguez (Benjamin.Iniguez@gmail.com) for more information

Tarragona is a medium city (100000 inhabitants) with a Mediterranean climate and many recreation opportunities (nice beaches, theme parks, nature preserves, mountain hiking, touristic resorts and facilities). It is located 100 km Southwest of Barcelona, and it is very well connected by train, bus, highways and even low cost flights from its own airport. Additional information about the University and the department can be found at: www.urv.cat and sauron.etse.urv.es



May 10, 2011

job offer at Mentor

As today (May 10, 2011), there is an open position as pre-sales engineer at Mentor. More details here.

May 7, 2011

π Raspberry Pi Foundation

The Raspberry Pi Foundation is a UK registered charity (Registration Number 1129409) which exists to promote the study of computer science and related topics, especially at school level, and to put the fun back into learning computing [read more...]