Tuesday, 17 May 2011

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, MAY 2011

A physically based, accurate compact model of direct tunneling gate current considering quantum mechanical effects in nanoscale metal-oxide-semiconductor field-effect transistors

  1. M. A. Karim1,2,*,
  2. Q. D. M. Khosru1
Article first published online: 12 MAY 2011
DOI: 10.1002/jnm.817
Cover image for Vol. 24 Issue 3

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields

Early View (Online Version of Record published before inclusion in an issue)

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