Venkatnarayan Hariharan, Juzer Vasi, V. Ramgopal Rao; Solid-State Electronics, Volume 53, Issue 2, February 2009, Pages 218-224
Abstract: In developing the drain current model of a symmetrically driven, undoped (or lightly doped) symmetric double-gate MOSFET (SDGFET), one encounters a transcendental equation relating the value of an intermediate variable β (which is related to the inversion charge areal density and also surface-potential) to the gate and drain voltages; as a result, it doesn’t have a closed form solution. From a compact modeling perspective, it is desirable to have closed form expressions in order to implement them in a circuit simulator. In this paper, we present an accurate closed form approximation for the inversion charge areal density, based on the Lambert-W function. We benchmark our approximation against other existing approximations and show that our approximation is computationally the most efficient and numerically the most robust, at a reduced but acceptable accuracy. Hence, it is suitable for use in implementing inversion charge based compact models.
DOI: 10.1016/j.sse.2008.11.006
Nov 13, 2009
Symmetric linearization method for double-gate and surrounding-gate MOSFET models
Gajanan Dessai, Aritra Dey, Gennady Gildenblat, Geert D.J. Smit; Solid-State Electronics, Volume 53, Issue 5, May 2009, Pages 548-556
Abstract: Symmetric linearization method is developed in a form free of the charge-sheet approximation present in its original formulation for bulk MOSFET. This leads to a core compact model of certain multiple-gate transistors that has the form almost identical to that used in a standard PSP MOSFET model. The accuracy of the proposed technique is verified by comparison with the exact results. The new core is compatible with the previous version of the double gate MOSFET model that has been found in agreement with the experimental data including short-channel effects and frequency response.
DOI: 10.1016/j.sse.2009.01.020
Abstract: Symmetric linearization method is developed in a form free of the charge-sheet approximation present in its original formulation for bulk MOSFET. This leads to a core compact model of certain multiple-gate transistors that has the form almost identical to that used in a standard PSP MOSFET model. The accuracy of the proposed technique is verified by comparison with the exact results. The new core is compatible with the previous version of the double gate MOSFET model that has been found in agreement with the experimental data including short-channel effects and frequency response.
DOI: 10.1016/j.sse.2009.01.020
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