MEMSTECH 2010

6th International Conference
Perspective Technologies and Methods in MEMS Design
Polyana, UKRAINE, 20 - 23 April 2010

Organized by:

• Lviv Polytechnic National University, CAD Department, Ukraine
• Warsaw University of Technology, Institute of Telecommunication, Poland
• IEEE MTT/ED/AP/CPMT/SSC West Ukraine Chapter

Supported by Lviv Regional State Administration

Topics include, but not limited to:

• Analysis, modelling, research and design methods of microsensors and microactuators
• Software systems, models, algorithms, methods and strategies of embedded systems design
• Field issues in embedded systems modelling and design
• Issues of testing, verification, reliability and optimization in embedded systems modelling and design
• Sensors and actuators systems, nanotechnology
• Applications for electron device design
• Information Technology. Engineering Application of Informatics. Engineering Education

Important Dates:

• February 15, 2010
• Deadline for abstract submissions (at least 400 words in plain text file, in English)
• March 15, 2010
• Notification of abstract acceptance
• April 02, 2010
• Deadline for final Camera-Ready Papers submissions (in English)

Read more...

A paper in Thin Solid Films

I've found a paper that may interest you:

The quantum size effects on the surface potential of nano-crystalline silicon thin film transistors

Ling-Feng Mao

(Available online 29 October 2009)

Abstract

The impact of the grain size of nc-Si (nano-crystalline silicon) on the surface potential of doped nc-Si TFTs (thin film transistors) is discussed. Quantum size effects cause the change in both band-gap and dielectric constant of nc-Si. Numerical calculation of the surface potential in nc-Si TFTs shows that the diameter of nc-Si has a larger effect on the surface potential of nc-Si TFTs. The results demonstrate that, for medium size (7 ~ 50 nm), the change in the band-gap of nc-Si should be considered, whereas, for small size (< 7 nm), the change in the dielectric constant of nc-Si should be considered. A simplified surface potential equation for nc-Si TFTs under strong inversion condition is proposed, and shows good agreement with the original equation via numerical calculation.


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