[paper] oTFT Charge-Based Variability Model

Aristeidis Nikolaou, Ghader Darbandy, Jakob Leise, Jakob Pruefer, James W. Borchert, Michael Geiger, Hagen Klauk, Benjamin Iñiguez, Fellow, IEEE,

and Alexander Kloes, Senior Member, IEEE

Charge-Based Model for the Drain-Current Variability in Organic Thin-Film Transistors 

Due to Carrier-Number and CorrelatedMobility Fluctuation

in IEEE TED (early access), DOI: 10.1109/TED.2020.3018694.

Abstract: In this study, a consistent analytical chargebased model for the bias-dependent variability of the drain current of organic thin-film transistors is presented. The proposed model combines both charge-carrier-numberfluctuation effects and correlated-mobility-fluctuation effects to predict the drain-current variation and is verified using experimental data acquired from a statistical population of organic transistors with various channel dimensions, fabricated on flexible polymeric substrates in the coplanar or the staggered device architecture.

Fig: a) Cross section of the organic TFTs fabricated in the inverted coplanar (bottom-gate, bottom-contact) architecture. b) Transistor channel divided into a noisy element between positions x and x + δx and two noiseless transistors of channel lengths x and L − x, respectively. c) Small-signal representation.

Acknowledgment: This work was supported in part by the German Federal Ministry of Education and Research “SOMOFLEX” under Grant 13FH015IX6 and in part by the German Research Foundation (DFG) under Grant KL 1042/9-2 (SPP FFlexCom). The authors would like to thank AdMOS GmbH for support.