Deni Germano Alves Neto 1,3, Mohamedkhalil Bouchoucha 2,3, Gabriel Maranhão 1, Manuel J. Barragan 3, Márcio Cherem Schneider 1, Andreia Cathelin 2, Sylvain Bourdel 1
and Carlos Galup-Montoro 1
Design-Oriented Single-Piece 5-DC-Parameter MOSFET Model
IEEE Access; vol. 12 (2024)
DOI: 10.1109/ACCESS.2024.3417316
1 Department of Electrical and Electronics Engineering, FUSC, Florianópolis (BR)
2 STMicroelectronics, Crolles (F)
3 Univ. Grenoble Alpes, CNRS, Grenoble INP, TIMA, Grenoble (F)
Abstract: This paper presents a novel charge-based MOSFET model, denoted ACM2, including velocity saturation and drain-induced barrier lowering. Employing the proposed model, all the DC characteristics (currents and charges) and the small-signal equations can be expressed as single-piece expressions valid in all inversion (weak, moderate, and strong) regions. When applied to bulk technology, ACM2 has 5 DC parameters, and an extra parameter is included for SOI technologies to account for back gate bias. Straightforward procedures are provided for extracting the short-channel parameters associated with velocity saturation and back gate bias. Experimental results demonstrate that the DC and small-signal characteristics of the ACM2 model match the silicon measurements in bulk and SOI technologies, with typical errors of less than 20 % in the DC currents and 30 % in the transconductances. The validity of the model is further verified with two design examples. Firstly, simulations of a CMOS inverter in a 130 nm bulk technology show similar results using the PSP or ACM2 models. Then, an RF design example is provided. The ACM2 model is employed to design a 2.4GHzlow-noise-amplifier in a 28nm FD-SOI CMOS technology. Obtained results in terms of S11, S21, NF, and IIP3 are consistent with simulations using the complete UTSOI2 model provided in the technology design kit.
| Technology | 130nm | 28nm | ||
| Transistor | NMOS | PMOS | NMOS | PMOS |
| W/L (um/um) VTO (mV) | 10/0.12 490 |
10/0.12 -478 |
1/0.06 389 |
1/0.06 -404 |
| Is (uA) | 11.78 | 9.39 | 3.15 | 0.76 |
| n | 1.41 | 1.46 | 1.15 | 1.01 |
| σ | 0.053 | 0.048 | 0.018 | 0.029 |
| ς | 0.007 | 0.031 | 0.039 | 0.024 |
| δ | - | - | 0.079 | -0.076 |
FIG: Conceptual structure of the ACM2 Model and its 6-DC parameters.
Acknowledgment: The authors would like to thank the STIC-AmSud multi national cooperative scientific program for supporting this research and STMicroelectonics and the Institute for High-Performance Microelectronics (IHP) for the design kits and silicon measurements. This work was supported in part by the Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (BR); in part by the Conselho Nacional de Desenvolvimento Científico e Tecnológico, (BR); in part by the TIMA Laboratory, Grenoble (F) and in part by STMicroelectronics, Crolles, France.
