Hdev: Open-Source SiGe and III-V HBT TCAD Simulator

Hdev: https://gitlab.com/metroid120/hdev_simulator

Hdev has been started as a TCAD simulator by Martin Claus at TU Dresden (initially named COOS). Hdev (heterostructure device) is a TCAD simulator focused on 1D and 2D simulations of HBTs. The purpose of Hdev is to allow easy technology analysis and optimization of heterostructure semiconductor devices. Later it has been adopted by Sven Mothes who also used it for CNTFET simulations. Then, it has been applied to organic semiconductors by Markus Müller in his bachelor and diploma theses, where the initial 2D drift-diffusion solver has been implemented. For his dissertation on InP HBTs, Markus Müller later created a fork of COOS aimed at HBT simulation. The fork has been renamed Hdev (heterostructure device) for highlighting the new focus of the software. Hdev is now applied to SiGe and III-V HBTs by Markus Müller in the scope of his PhD thesis.

Hdev Features:

• true 1D simulations => time efficient
• box discretization => easy to use
• semiconductor alloys => SiGe and III-V HBTs
• DC, AC and transient analysis
• augmented DD equation
• degenerate semiconductor statistics
• read and write hdf5 files
• GPL license

Figure 1: (left) vertical profile of the node three HBT and (right) transfer characteristics of the HBT from 1D energy-transport simulations at VBC = −0.7 V at 300 K.