Sedemos News: Atomistic TNL TCAD Solutions

Greetings from Dr. Praveen Saxena. We wish good health to all recipients of the mail. As a result of the significant disruption that is being caused by COVID-19 pandemic all around world and especially in India, everybody need to stay at home as preventive care and remain busy with some task. We are concerned about you and your family well-being. Please take care and stay safe.

This is the best time to evaluate the Unmatched family of Innovative Atomistic TNL TCAD simulators. You may freely download the software from below link:

http://www.technextlab.com/login.php

Register yourselves and download the TNL setup. Tech Next Lab will provide you 1- months licenses for all simulators free of cost along with technical support.

We are pleased to introduce in-house developed Unmatched family of Innovative Atomistic TNL TCAD simulators, including EpiGrow (Epitaxial Growth), FullBand (Material Characterization), HallMobility (Material Characterization), THz Spectroscopy (Material Characterization), and Monte Carlo Particle Device simulators (MCPDS).

All products are proprietary products of Tech Next Lab (P) Ltd. We provide instant technical and sales solution for the queries and feedback come from the customers. You may find more details about TNL TCAD tools on our website: www.technextlab.com

We may assure you that our simulators will surely help in expediting the most of semiconductor Technologies Developments and also benefits your students from teaching prospective. Few Publications:

For MOCVD epitaxial growth you may find more details:

https://www.sciencedirect.com/science/article/abs/pii/S0925838819329858

For GaN based technology for FET device applications:

https://link.springer.com/chapter/10.1007/978-981-15-5262-5_61

For Group-III nitrides and its alloys:

https://www.nature.com/articles/s41598-020-75588-3

Group II-VI Material Characterization:

https://link.springer.com/article/10.1007/s11664-021-08756-4

For Detector Application:

https://publications.drdo.gov.in/ojs/index.php/dsj/article/view/11177

https://link.springer.com/article/10.1007/s11082-020-02488-1

Feel free to write <info@technextlab.com> in case you have any query.

Looking forward to hear from you ASAP.

Best Regards,

Praveen

Atomistic TNL TCAD simulators:

TNL Framework: TNL Framework includes family of innovative simulators based on atomistic level. It provides innovative technology solution to semiconductor industry. The technology development is expensive process and suffers with lot of technical challenges & issues. TNL framework is designed to innovate the semiconductor device designing. It accommodate atomistic based thin film growth simulator, full band simulator, material characterization simulator and Monte Carlo particle device simulator.

EpiGrow Simulator: EpiGrow simulator is world's first commercial innovative atomistic epitaxial growth simulator to grow thin film inside MBE/MOCVD reactors. EpiGrow simulator is powerful tool to trace atomistic thin and thick film growth inside reactors. Kinetic Monte Carlo algorithms keeps Randomness in adsorption, hopping & desorption processes. It offer cost economical solution for thin film growth technology even for nm thin monolayer. Capable to predict the initial conditions for Molecular Beam Epitaxy & Molecular Organic Chemical Vapor Deposition (MOCVD) reactors. Capable to calculate the lattice constant of monolayer, trace different types of defects, and strain. Optimizer provides flexibility to optimize initial conditions with EpiGrow Simulator and run design of experiments over the computer.

TNL-FB Simulator: Full Band Simulator is powerful tool, extends the empirical pseudopotential method to include semiconductors with the zincblende as well as wurtzite structures and simulates electronic band structures with appropriate pseudopotential form factors chosen from the reported reputed references for binary alloy semiconductor materials and interpolate the pseudopotential form factors for ternary alloy semiconductor materials to simulate the full electronic band structures of ternary materials. The bowing of band energies and their deformation potentials is included inside simulator in form of alloy disorder. Capable to simulate the full electronic band structures for the lattice constant of monolayer provided by users. Different types of physical parameters e.g. carrier velocity, effective mass and density of states can be easily tracable on the full electronic band structures of the chosen materials. Provides flexibility to users to chose lattice constant and analyse the full electronic band structures over computer.

TNL-EM Simulator: Electron Mobility Simulator is powerful tool, simulates carriers transport on full energy band. The microscopic simulation of the motion of individual particles in the presence of the forces acting on them due to external fields as well as the internal fields of the crystal lattice and other charges in the system. In solids, such as semiconductors and metals, transport is known to be dominated by random scattering events due to impurities, lattice vibrations, etc. has been inputted through Monte Carlo technique, which randomize the momentum and energy of charge particles in time. Hence, stochastic techniques to model these random scattering events are particularly useful in describing transport in semiconductors, in particular the Monte Carlo method. Provides flexibility to users to initialize the carriers over full energy band and analyze the transport of carrier to simulate the ensemble velocity of carriers under external electromagnetic forces on computer.

TNL-TS (THz Spectroscopy) Simulator is powerful tool to simulates motion of charged and interacting particles. The microscopic simulation of the motion of individual particles under the influence of the THz pulse as well as the internal fields of the crystal lattice and influence of other charges, lattice defects etc. In solids, such as semiconductors and metals, transport is known to be dominated by random scattering events due to impurities, lattice vibrations, etc., which randomize the momentum and energy of charge particles in time. The stochastic techniques to model these random scattering events are particularly useful in describing inter and intraband transitions of charge carriers in bulk & nonmaterial. The Monte Carlo technique use for solution of Boltzmann transport equation provides flexibility to users to initialize the carriers over many or particular band of the material and analyze the position, momentum, energy & other properties associated with motion of charged particles under influence of THz Pulses, frequencies ranging from few hundred gigahertz to several terahertz. THz Spectroscopy simulator has capabilities to simulate the microscopic conductivity of weakly confined, classical electrons in absence of depolarization effects without need of any approximations of fitting parameters to calibrate the Drude-Smith conductivities..

TNL-PD Simulator: World's Fastest Monte Carlo Particle Device simulator includes transport model solution with a self -consistent Boltzmann-Poisson equation and a GUI based feature helps users to select device geometry and doping density in 2D and 3D. The different carrier scattering mechanisms has major influence on the performance of device output and dependent on the density of states (DOS) in each valley which can be accurately inputted through full band structure. The effect of equilibrium states of carrier before start of free flight of carrier has been incorporated in term of inclusion of depletion region through movement of the ensemble of carriers under influence of external electrostatic field obtained by solving the Poisson equation. The quantum confinement effect includes density gradient approach and effective potential approach for computation of quantum confinement effects on the carrier transport under influence of external forces. Particle Device Simulator (PDS) is exploited for unipolar as well as bipolar semiconductor technologies based devices including MOSFET, Multigate FETS, HEMT and P-N junction devices.