We, Tech Next Lab jointly with IEEE are organizing online Webinar on Material Growth, Characterization of Semiconductors and Device Applications Through Atomistic TNL TCAD. You may register on below given link and forward webinar link to other participants who are interested:
Date: Saturday, 21st November 2020 Time: 17.00 to 18.00 PM
We are pleased to introduce unmatched family of Innovative Atomistic TNL TCAD simulators, including EpiGrow, FullBand, HallMobility and Monte Carlo Particle Device simulators. All products are proprietary products of Tech Next Lab (P) Ltd. We provide instant technical and sales solution for the queries and feedback come from the customers. You may find more details about TNL TCAD tools on our website: www.technextlab.com You may download TNL TCAD from our website and ask us for evaluation license. Feel Free to write us your technical and sales related queries, we will revert to you with in next working day.
Looking forward to meeting you.
Best Regards,
TNL Framework: TNL Framework includes family of innovative simulators based on atomistic level. It provides innovative technology solution to semiconductor industry. The technology development is expensive process and suffers with lot of technical challenges & issues. TNL framework is designed to innovate the semiconductor device designing. It accomodate atomistic based thin film growth simulator, full band simulator, material characterization simulator and Monte Carlo particle device simulator.
EpiGrow Simulator: EpiGrow simulator is world's first commercial innovative atomistic epitaxial growth simulator to grow thin film inside MBE/MOCVD reactors. EpiGrow simulator is powerful tool to trace atomistic thin and thick film growth inside reactors. Kinetic Monte Carlo algorithms keeps Randomness in adsorption, hopping & desorption processes. It offer cost economical solution for thin film growth technology even for nm thin monolayer. Capable to predict the initial conditions for Molecular Beam Epitaxy & Molecular Organic Chemical Vapor Deposition (MOCVD) reactors. Capable to calculate the lattice constant of monolayer, trace different types of defects, and strain. Optimizer provides flexibility to optimize initial conditions with EpiGrow Simulator and run design of experiments over the computer.
FullBand Simulator: Full Band Simulator is powerful tool, extends the empirical pseudopotential method to include semiconductors with the zincblende as well as wurtzite structures and simulates electronic band structures with appropriate pseudopotential form factors chosen from the reported reputed references for binary alloy semiconductor materials and interpolate the pseudopotential form factors for ternary alloy semiconductor materials to simulate the full electronic band structures of ternary materials. The bowing of band energies and their deformation potentials is included inside simulator in form of alloy disorder. Capable to simulate the full electronic band structures for the lattice constant of monolayer provided by users. Different types of physical parameters e.g. carrier velocity, effective mass and density of states can be easily tracable on the full electronic band structures of the chosen materials. Provides flexibility to users to chose lattice constant and analyse the full electronic band structures over computer.
Hall Mobility Simulator: Hall Mobility Simulator is powerful tool, simulates carriers transport on full energy band. The microscopic simulation of the motion of individual particles in the presence of the forces acting on them due to external fields as well as the internal fields of the crystal lattice and other charges in the system. In solids, such as semiconductors and metals, transport is known to be dominated by random scattering events due to impurities, lattice vibrations, etc. has been inputted through Monte Carlo technique, which randomize the momentum and energy of charge particles in time. Hence, stochastic techniques to model these random scattering events are particularly useful in describing transport in semiconductors, in particular the Monte Carlo method. Provides flexibility to users to initialize the carriers over full energy band and analyze the transport of carrier to simulate the ensemble velocity of carriers under external electromagnetic forces on computer.
MC Particle Device Simulator: World's Fastest Monte Carlo Particle Device simulator includes transport model solution with a self -consistent Boltzmann-Poisson equation and a GUI based feature helps users to select device geometry and doping density in 2D and 3D. The different carrier scattering mechanisms has major influence on the performance of device output and dependent on the density of states (DOS) in each valley which can be accurately inputted through full band structure. The effect of equilibrium states of carrier before start of free flight of carrier has been incorporated in term of inclusion of depletion region through movement of the ensemble of carriers under influence of external electrostatic field obtained by solving the Poisson equation. The quantum confinement effect includes density gradient approach and effective potential approach for computation of quantum confinement effects on the carrier transport under influence of external forces. Particle Device Simulator (PDS) is exploited for unipolar as well as bipolar semiconductor technologies based devices including MOSFET, Multigate FETS, HEMT and P-N junction devices.
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Dr. P. K. Saxena
CEO & CTO,
Tech Next Lab Pvt Ltd (TNL)
Near Nagar Nigam Office Zone-6,
Niwaz Ganj, Lucknow- 226 003 (INDIA)
Phone: (+91) 983 915 1284 / (+91) 9415893655
Fax: 0522 2258921
Email: info@technextlab.com
Web: www.technextlab.com
Skype ID: praveen.itbhu
Linkedin: https://www.linkedin.com/home?trk=nav_responsive_tab_home
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