Tuesday, 7 March 2017

[paper] III-V Channel Double Gate FETs

Compact Modeling of Charge, Capacitance, and Drain Current
in III-V Channel Double Gate FETs
C. Yadav; M. Agrawal; A. Agarwal; Y. S. Chauhan
in IEEE Transactions on Nanotechnology , vol.PP, no.99, pp.1-1
doi: 10.1109/TNANO.2017.2669092
Abstract: In this paper, we present a surface potential based compact modeling of terminal charge, terminal capacitance, and drain current for III-V channel double gate field effect transistor (DGFET) including the effect of conduction band nonparabolicity. The proposed model is developed accounting for the 2-D density of states and includes the effect of quantum capacitance associated with the low density of states channel material. In addition, model incorporates contribution of the first two subbands and efficiently captures the step like behavior appearing in the gate capacitance and trans-conductance with population of the higher sub-bands. The behavior of bias dependent terminal capacitances and drain current are verified with the numerical simulation data of InGaAs channel DGFET and shows a close agreement with the simulation data [read more...]

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