Statistical model of the NBTI induced threshold voltage, subthreshold swing, and transconductance degradations in advanced pFinFETs
J. Franco, B. Kaczer, S. Mukhopadhyay, P. Duhan, P. Weckx, Ph.J. Roussel, T. Chiarella, L.-Å. Ragnarsson, L. Trojman, N. Horiguchi, A. Spessot, D. Linten, A. Mocuta
2016 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 2016, pp. 15.3.1-15.3.4.
DOI: 10.1109/IEDM.2016.7838422
AbstractJ. Franco, B. Kaczer, S. Mukhopadhyay, P. Duhan, P. Weckx, Ph.J. Roussel, T. Chiarella, L.-Å. Ragnarsson, L. Trojman, N. Horiguchi, A. Spessot, D. Linten, A. Mocuta
2016 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 2016, pp. 15.3.1-15.3.4.
DOI: 10.1109/IEDM.2016.7838422
We study the stochastic NBTI degradation of pFinFETs, in terms of ΔVth, ΔSS, and Δgm. We extend our Defect-Centric model to describe also the SS distribution in a population of devices of any area, at any stage of product aging. A large fraction of nanoscale devices is found to show a peak g m improvement after stress. We explain this effect in terms of the interaction of individual defects with the percolative channel conduction, and we propose a statistical description of g m aging. Our Vth, SS, and gm aging models are pluggable into reliability-enabled compact models to estimate design margins for a wide variety of circuits. Selected nanoscale device characteristics resulting from 3 percolation paths, generated with the EKV model [read more...]
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