Tuesday, 31 January 2017

[paper] Electronically tunable MOSFET-based resistor

Electronically tunable MOSFET-based resistor used in a variable gain amplifier or filter
W. L. Tan, C. H. Chang and L. Siek
Nanyang Technological University; Singapore 
2016 International Symposium on Integrated Circuits (ISIC), Singapore, 2016, pp. 1-4.
doi: 10.1109/ISICIR.2016.7829715
Abstract: We present a new design of an electronically tunable linear MOS resistor circuit that operates in the subthreshold saturation region, supported with mathematical derivations and simulation results using CSM0.13µm technology. For a given potential difference across the MOS resistor, its gate voltage will be automatically biased through feedback to provide the correct amount of current based on the desired resistance set through the bias current. Equating the output current of the OTA with the subthreshold equation of the EKV model. In comparison with an existing design, the proposed design offers equal tunabilty with 36 less transistors for unidirectional current and 28 less transistors with one more bias current transistor for bidirectional current. A bias current ranging between 10nA to 100nA offers a tunable linear resistance between 20MΩ to 140MΩ [read more...]

No comments: