Tuesday, September 14, 2010

Paper in IEE Electronics Letters (September 2010)

Analytical modelling of gate tunnelling current of MOSFETs based on quantum tunnelling

Kazerouni, I.A.;   Hosseini, S.E.;   Parashkoh, M.K.;  
Engineering Department, Tarbiat Moallem University of Sabzevar, Sabzevar, Iran 
This paper appears in: Electronics Letters
Issue Date: September 2010
46 Issue:18
On page(s): 1277 - 1279
ISSN: 0013-5194
Digital Object Identifier: 10.1049/el.2010.1339 
Date of Current Version: 09 September 2010
Sponsored by: Institution of Engineering and Technology 


The gate tunnelling current of MOSFETs is an important factor in modelling ultra-small devices. In this reported work, the gate tunnelling current in present-generation MOSFETs is studied. Presented is a model for the gate tunnelling current in MOSFETs having ultra-thin gate oxides. In the proposed model, the electron wavefunction at the semiconductor-oxide interface is calculated and inversion charge by assuming the inversion layer as a potential well, including some simplifying assumptions. Then the gate tunnelling current is calculated using the calculated wavefunction. The proposed model results have excellent agreement with experimental results in the literature.

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