I've been reading some new papers, and I've found some worth noticing:
The first one (Statistics of Grain Boundaries in Polysilicon),from H. Watanabe, is a quite interesting paper, discussing the application of statistics to a MOSFET model. I believe that the idea is applicable not only to bulk MOS, like he does, but it is somehow the path to follow for all the models devoted to devices where a signifiant parameter dispersion is expected. In fact, I think that this is a better way to face the problem than the one proposed by the EKV model, where they proposed a model for the deviations of the parameters.
And tomorrow, more...
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