François Anceau, Founder of CMP, has died. He was 80. "Today is a sad day for the entire CMP family," CMP’s Director Kholdoun Torki said. "François was a visionary, he influenced generations of microelectronic developments in France" https://t.co/K9ASeQmTsX #paper https://t.co/mT5RVrnxme

François Anceau, Founder of CMP, has died. He was 80. "Today is a sad day for the entire CMP family," CMP’s Director Kholdoun Torki said. "François was a visionary, he influenced generations of microelectronic developments in France"https://t.co/K9ASeQmTsX#paper pic.twitter.com/mT5RVrnxme

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article reached 1500 reads

A. Bazigos, M. Bucher, J. Assenmacher, S. Decker, W. Grabinski and Y. Papananos, "An Adjusted Constant-Current Method to Determine Saturated and Linear Mode Threshold Voltage of MOSFETs," in IEEE TED, vol. 58, no. 11, pp. 3751-3758, Nov. 2011.

Abstract: The constant-current (CC) method uses a current criterion to determine the threshold voltage (VTH) of metal-oxide-semiconductor (MOS) field-effect transistors. We show that using the same current criterion in both saturation and linear modes leads to inconsistent results and incorrect interpretation of effects, such as drain-induced barrier lowering in advanced CMOS halo-implanted devices. The generalized adjusted CC method is based on the theory of the charge-based MOS transistor model. It introduces an adjusted current criterion, depending on VDS, allowing to coherently determine VTH for the entire range of V DS from linear operation to saturation. The method uses commonly available ID versus VG data with focus on moderate inversion. The method is validated with respect to the ideal surface potential model, and its suitability is demonstrated with technology-computer-aided-design data from a 65-nm CMOS technology and measured data from a 90-nm CMOS technology. Comparison with other widely used threshold voltage extraction methods is provided.

CICC 2020 March 22 – March 25, 2020 Virtually from anywhere! https://t.co/6LMk0g4HDq #paper https://t.co/FTH07ngklp

CICC 2020
March 22 – March 25, 2020
Virtually from anywhere!
https://t.co/6LMk0g4HDq#paper pic.twitter.com/FTH07ngklp

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March 09, 2020 at 04:03PM
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The New Dates of SEMICON/FPD China 2020 https://t.co/m1znJk8eKK #paper https://t.co/nUAveoEvpl

The New Dates of SEMICON/FPD China 2020https://t.co/m1znJk8eKK#paper pic.twitter.com/nUAveoEvpl

— Wladek Grabinski (@wladek60) March 6, 2020

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March 06, 2020 at 01:15PM
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#paper: Y. Liu, S. Yang and K. Sheng, "Design and Optimization of Vertical GaN PiN Diodes With Fluorine-Implanted Termination," in IEEE Journal of the Electron Devices Society, vol. 8, pp. 241-250, 2020 doi: 10.1109/JEDS.2020.2975220 https://t.co/34ZWW1P73Y https://t.co/hKNGErgo4I

#paper: Y. Liu, S. Yang and K. Sheng, "Design and Optimization of Vertical GaN PiN Diodes With Fluorine-Implanted Termination," in IEEE Journal of the Electron Devices Society, vol. 8, pp. 241-250, 2020

doi: 10.1109/JEDS.2020.2975220https://t.co/34ZWW1P73Y pic.twitter.com/hKNGErgo4I

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#paper: S. Mocevic et al., "Comparison and Discussion on Shortcircuit Protections for SiC MOSFET Modules: Desaturation vs. Rogowski Switch-Current Sensor," in IEEE Transactions on Industry Applications doi: 10.1109/TIA.2020.2972816 https://t.co/qYVwtxy2BF https://t.co/Z4oY9m6Dhl

#paper: S. Mocevic et al., "Comparison and Discussion on Shortcircuit Protections for SiC MOSFET Modules:
Desaturation vs. Rogowski Switch-Current Sensor," in IEEE Transactions on Industry Applications

doi: 10.1109/TIA.2020.2972816https://t.co/qYVwtxy2BF pic.twitter.com/Z4oY9m6Dhl

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March 05, 2020 at 03:59PM
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#paper: Q. Huo et al., "Physics-Based Device-Circuit Cooptimization Scheme for 7-nm Technology Node SRAM Design and Beyond," in IEEE Transactions on Electron Devices, vol. 67, no. 3, pp. 907-914, March 2020 doi: 10.1109/TED.2020.2964610 https://t.co/wEf5wGKzFv https://t.co/AGBu4ZUtVR

#paper: Q. Huo et al., "Physics-Based Device-Circuit Cooptimization Scheme for 7-nm Technology Node SRAM Design and Beyond," in IEEE Transactions on Electron Devices, vol. 67, no. 3, pp. 907-914, March 2020

doi: 10.1109/TED.2020.2964610 https://t.co/wEf5wGKzFv pic.twitter.com/AGBu4ZUtVR

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